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74V1G07STR

STMicroelectronics

74V1G07STR by STMicroelectronics

74V1G07STR by STMicroelectronics is a CMOS logic gate with a propagation delay of just 5.3 ns, operating b/w 2-5.5 V. It features an open-drain output and supports load capacitance up to 50 pF, making it ideal for high-speed applications in compact designs. Its military-grade temperature range ensures reliability in harsh environments.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 6,124 parts In-Stock

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Digiode

USA . 4,601 parts In-Stock

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Anansix

USA . 2,579 parts In-Stock

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2,579

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LWI Electronics Inc

India . 11 parts In-Stock

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AZTECH Wire

Italy . 241 parts In-Stock

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$8.550

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241

$8.550

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Microchip USA

USA . 172 parts In-Stock

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$8.934

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$8.934

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IDEA Electronic Components Group

UK . 2,299 parts In-Stock

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$22.730

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$20.457

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$22.730

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MKK Technologies

India . 1,440 parts In-Stock

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$42.743

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$42.743

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DigiPath Technology Company

USA . 1,440 parts In-Stock

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$42.743

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Kepictronics

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,804 parts In-Stock

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Perfect Parts

USA . 8,671 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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Northwest PG Solutions

USA . 1,779 parts In-Stock

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Parana Technologies

USA . 1,585 parts In-Stock

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$27.178

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Corphita

USA . 1,136 parts In-Stock

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Native Components

USA . 589 parts In-Stock

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Overview

Unlock innovation with the 74V1G07STR from STMicroelectronics, a leader in high-quality logic gates. This compact, low-profile device ensures rapid performance and reliability for applications spanning automotive to consumer electronics. Designed to thrive in demanding environments, it delivers exceptional power efficiency and operational longevity. Elevate your projects with a product that combines cutting-edge technology and trusted manufacturing excellence, enhancing both functionality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and environmental resistance, making this logic gate suitable for a range of applications.

Propagation Delay At Nominal Supply: 5.3 ns

A low propagation delay enhances the speed of signal processing, making this device suitable for high-speed applications.

Surface Mount: YES

Surface mount technology allows for compact designs and facilitates automated assembly processes, making integration easier.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space efficiency on PCBs, allowing for a higher component density in small designs.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of modern digital circuits.

Load Capacitance (CL): 50 pF

A moderate load capacitance allows for consistent performance in typical digital applications without significant signal degradation.

Power Supplies (V): 2/5.5

The flexibility in supply voltage options (2V to 5.5V) makes this logic gate adaptable to various system requirements.

No. of Terminals: 5

With 5 terminals, the device offers efficient connectivity for a range of logic functions in compact designs.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

This low-profile package style is perfect for space-constrained applications, ensuring versatility in design.

Maximum I (ol): 4 Amp

A high output current specification of 4A allows this device to drive larger loads, improving its usefulness in power-sensitive applications.

Propagation Delay (tpd): 12.5 ns

This specification indicates versatility—the logic gate remains viable for a broad range of applications requiring moderate speed.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature indicates reliability under extreme conditions, suitable for military and industrial applications.

Output Characteristics: OPEN-DRAIN

Open-drain output configuration offers flexibility in circuit design, allowing for easy integration with other logic families.

Minimum Operating Temperature: -55 °C

The capability to operate at temperatures as low as -55 °C makes this logic gate suitable for harsh environments.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish improves solderability and corrosion resistance, enhancing long-term reliability.

Terminal Position: DUAL

Dual terminal position provides easy access for connections and simplifies circuit layouts.

Maximum Seated Height: 1.45 mm

A low seated height aids in the compactness of designs, making it ideal for portable and space-limited applications.

Width: 1.625 mm

A narrow width makes this logic gate suitable for densely populated circuit boards.

Minimum Supply Voltage (Vsup): 2 V

This low minimum supply voltage ensures compatibility with a variety of power sources and energy-efficient designs.

Maximum Time At Peak Reflow Temperature (s): 30

A well-defined reflow profile ensures high-quality solder joints, which is critical for maintaining reliability in assembly.

Peak Reflow Temperature °C: 260

A high peak reflow temperature makes this device suitable for lead-free solder processes.

Length: 2.9 mm

This short length supports compact layouts in high-density boards, maximizing available space.

Temperature Grade: MILITARY

Military-grade specifications ensure reliability and performance in demanding environments, making it ideal for defense applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, enhancing overall efficiency and reliability.

Terminal Form: GULL WING

Gull wing terminals improve solder joint strength and reliability, especially in automated assembly processes.

Packing Method: TR

Tape and reel packing facilitate easy handling and automated placement in high-volume production.

Terminal Pitch: 0.95 mm

A terminal pitch of 0.95 mm allows sufficient spacing for mounting while ensuring robust connection integrity.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V allows for higher performance in applications requiring additional power capability.

Technical Specifications

Logic Gates 74V1G07STR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

5.3 ns

Propagation Delay (tpd):

12.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.625 mm

Trade Compliance

74V1G07STR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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