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BSM150GB120DN2E3166

Siemens

BSM150GB120DN2E3166 by Siemens

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 210 A; Maximum Turn Off Time (toff): 800 ns; Maximum Fall Time (tf): 100 ns;

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM150GB120DN2E3166 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Siemens

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

100 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

2500 W

Qualification:

Not Qualified

Maximum Rise Time (tr):

200 ns

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

800 ns

Nominal Turn Off Time (toff):

600 ns

Maximum Turn On Time (ton):

400 ns

Nominal Turn On Time (ton):

200 ns

Maximum VCEsat:

3 V

Trade Compliance

BSM150GB120DN2E3166 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Siemens

Siemens is an industrial conglomerate, with businesses selling components and equipment for factory automation, railway equipment, electrical distribution equipment, and medical equipment. Through spinoffs it owns a controlling stake in separately listed Siemens Healthineers and minority take in Siemens Energy, also publicly listed. Healthineers supplies medical imaging equipment, while Siemens Energy supplies power generation, and wind turbines, respectively.

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