Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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ECH8661-TL-H Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PHOENIX, Ariz. and TOKYO, Japan – Jan. 3, 2011 – ON Semiconductor Corporation (Nasdaq: ONNN) today announced the completion of the acquisition of SANYO Semiconductor Co., Ltd., a subsidiary of SANYO Electric, and other assets related to SANYO Electric’s semiconductor business, by ON Semiconductor. Under the terms of the purchase agreement, ON Semiconductor paid approximately ¥11.8 billion ($144 million) in cash to SANYO Electric and drew down approximately ¥31.7 billion ($378 million) under a loan agreement with SANYO Electric. “The combination with SANYO Semiconductor represents an important step in the continued transformation of ON Semiconductor into a premier global supplier of high-performance silicon solutions for energy efficient electronics,” said Keith Jackson, president and CEO of ON Semiconductor. “This acquisition enables us to expand wholeheartedly into the Japanese market and to capture growth on a global basis. We believe this acquisition will create immediate value for customers, partners and investors, and we are excited to welcome the employees of SANYO Semiconductor to the ON Semiconductor family.”
MMSZ5245BT1G
Onsemi
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
BAV99
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Inchange Semiconductor
Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;
1N4148WS
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MMBF170LT1G
MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.
1N4148
Sinyork
RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
BSS138
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
Microsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
NXP Semiconductors
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
M39029/58360
Esterline Technologies
CONNECTOR ACCESSORY; Terminal Type: CRIMP; Removal Tools: M81969/14-01; Associated Military - Specifications: MIL-DTL-38999; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT;
LL4148
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
EU2B-YS3203F
Idec
ROTARY SWITCH;
Changzhou Galaxy Century Microelectronics
BSS123,215
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
IRF3205ZSPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSC016N06NSTATMA1
Infineon Technologies
Infineon's BSC016N06NSTATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0016 ohm RDS(on), and 380mJ EAS. Its METAL-OXIDE SEMICONDUCTOR technology and DUAL terminal position make it suitable for high-power operations in various electronic devices.
STS4DNF60L
STMicroelectronics
STS4DNF60L by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage, 16A IDM, and 0.065 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package. Operating at up to 150°C, it offers high power dissipation and avalanche energy rating.
SI7923DN-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7923DN-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 30V DS breakdown voltage, 20A max pulsed drain current, and 0.047 ohm max drain-source resistance. Ideal for power management in compact electronic devices with its small outline package and dual terminal position.
IRF530PBF
Vishay Intertechnology's IRF530PBF is a N-CHANNEL FET with 100V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 88W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
AUIRFZ44NS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; JESD-609 Code: e3; Transistor Application: SWITCHING;
CSD18563Q5AT
Texas Instruments
CSD18563Q5AT by Texas Instruments is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 96A IDM and 146mJ EAS, operating in the -55 to 150 °C temperature range. This SINGLE transistor has a 0.0108 ohm Drain-Source Resistance and comes in a SMALL OUTLINE package style.
FDD4685
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 205 pF;
BSC011N03LSIATMA1
Infineon's BSC011N03LSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0015 ohm RDS(on), and 100mJ EAS rating. Its small outline package and DUAL terminal position make it suitable for various power management systems.
IRLL110TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Additional Features: LOGIC LEVEL COMPATIBLE;
IRFH5004TRPBF
The Infineon Technologies IRFH5004TRPBF is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A ID. Ideal for SWITCHING applications, it features a built-in diode, 400A IDM, and 0.0026 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 150°C.
IRFP460
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
IRF740APBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE; Transistor Application: SWITCHING;
IRFR024NTRPBF
IRFR024NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 71mJ EAS, and 0.075ohm RDS(ON). With a max power dissipation of 45W and operating temperature of 175°C, it's suitable for high-power electronic systems.
STY60NK30Z
STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.
STD25NF10LT4
STD25NF10LT4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 25A Drain Current, 450mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and high power dissipation of 100W, it offers efficient performance in various electronic designs.
IRFP260NPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Qualification: Not Qualified; Transistor Application: SWITCHING;
IRF740PBF
Vishay Intertechnology's IRF740PBF is a N-CHANNEL Power FET with 400V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 520mJ EAS rating, and 0.55 ohm RDS(on).
2N7000
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Matte Tin (Sn);
SUM110P06-08L-E3
Vishay Semiconductors
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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ECH8695R-TL-W
ECH8695R-TL-W by Onsemi is an N-CHANNEL Power FET with 11A max drain current and 1.5W power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power management systems or motor control circuits. Operating up to 150°C, it features surface mount technology and tin/bismuth terminal finish for reliable performance.
ECH8661-TL-H
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: Tin/Bismuth (Sn/Bi); Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6;
ECH8693R-TL-W
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-609 Code: e6; JESD-30 Code: R-PDSO-F8;
ECH8690-TL-H
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Finish: Tin/Bismuth (Sn/Bi); Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6;
ECH8668-TL-H
Sanyo Semiconductor
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; Minimum DS Breakdown Voltage: 20 V; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; JESD-609 Code: e6; Maximum Pulsed Drain Current (IDM): 40 A;
ECH8660-TL-H
Power Field-Effect Transistors; JESD-609 Code: e6; Terminal Finish: Tin/Bismuth (Sn/Bi); Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
ECH8697R-TL-W
Power Field-Effect Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Tin/Bismuth (Sn/Bi);
ECH8601M-C-TL-H
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;
ECH8410
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain Current (ID): 12 A; No. of Elements: 1;
ECH8601R
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (ID): 6.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
ECH8601M
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain Current (Abs) (ID): 8 A; Maximum Drain Current (ID): 8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
ECH8402
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 10 A;
ECH8601M-TL-H
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 8 A; Minimum DS Breakdown Voltage: 24 V;
ECH8315-TL-H
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (Abs) (ID): 7.5 A; Maximum Time At Peak Reflow Temperature (s): 30;
ECH8602M
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (ID): 6 A; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
ECH8309-TL-H
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e6; Peak Reflow Temperature (C): 260;
ECH8315-TL-W
Power Field-Effect Transistors; JESD-609 Code: e6; Terminal Finish: Tin/Bismuth (Sn/Bi); Moisture Sensitivity Level (MSL): 1;
ECH8411
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain Current (Abs) (ID): 9 A; Maximum Operating Temperature: 150 Cel;
ECH8661
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .024 ohm; Maximum Pulsed Drain Current (IDM): 40 A;
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