Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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ECH8693R-TL-W by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in ENHANCEMENT MODE for SWITCHING applications. Features include 14A max drain current, 0.0091 ohm max on resistance, and 60A pulsed drain current.
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$0.283
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$0.086
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Mouser Electronics
$1.100
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DigiKey
EBV Elektronik
Verical
$0.278
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Rochester
$0.235
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Digiode
$0.082
Greenchips
$0.259
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Nova Conductors
$0.294
Chip Stock
Vyrian
SIE Connect GmbH - GreenChips
NAC Semi
$0.550
Ampacity Inc.
$0.073
Semicontronic
$0.071
Corphita
$0.077
Corohmni
Argo Parts USA
$0.291
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Continental Prestige Electronics
$0.285
Modulus Dynamics
Bastille Electronics
$0.279
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Aztec Data Supply Inc.
$1.910
iodParts Technologies Inc.
Kulean Microsystems
A-Z Elektronik GmbH
Alle Elektronik GmbH
Lixinc
SupplyDigital Components
Authorized Procurement Solutions
Problanco Electronics
TANS Electronics
UHIMA Technologies
Kepictronics
This material provides durability and protection for the internal components of the FET, ensuring a longer lifespan.
N-CHANNEL FETs typically have lower ON resistance and higher current carrying capacity compared to P-CHANNEL FETs, making them suitable for high power applications.
This configuration allows for efficient switching and provides built-in protections, simplifying circuit design and reducing the need for additional components.
Designed specifically for switching applications, ensuring fast and reliable operation.
Enables easy and secure mounting on PCBs, saving space and simplifying assembly processes.
With a minimum breakdown voltage of 24 V, this FET can handle higher voltages without risk of damage or failure.
Capable of handling high pulsed currents, making it suitable for applications with varying power demands.
Can operate at high temperatures without performance degradation, ideal for industrial and automotive applications.
Can sustain a continuous drain current of 14 A, suitable for medium to high-power applications.
Low ON resistance leads to reduced power losses and improved efficiency in power conversion applications.
Power Field Effect Transistors (FET) ECH8693R-TL-W attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
ECH8693R-TL-W Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - ECH869XR 15/Dec/2016
PCN Assembly/Origin - Wafer Fab Change 12/May/2016
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
EU2B-YS3203F
Idec
ROTARY SWITCH;
LL4148
Synsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Bytesonic Electronics
CC0603KRX7R9BB104
Yageo
Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.
1N4148WS
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;
SS14
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Rugao Dachang Electronic
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
LM358AN
Signetics
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
ERJU06F10R0V
Panasonic
ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.
MBR0520LT1
Motorola
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Forward International Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Maximum Operating Temperature: 200 Cel; No. of Phases: 1;
BSS138
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
1N4148WT
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Thinking Electronic Industrial
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Bkc Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
IRLML2030TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
IPB010N06NATMA1
Infineon Technologies
Infineon's IPB010N06NATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 720A pulsed drain current, 1600mJ avalanche energy rating, and 0.001 ohm max on-resistance. With a max power dissipation of 300W and operating temp up to 175°C, it's suitable for high-power circuits in various industries.
IRFZ44NSTRLPBF
IRFZ44NSTRLPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(on). With a max power dissipation of 94W and operating temp of 175°C, it's suitable for high-power circuits requiring fast switching capabilities.
FDS6680A
FDS6680A by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 50A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.5W and can handle up to 12.5A drain current.
IRLML2502
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 33 A; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
IRFP460LC
Vishay Intertechnology
Vishay Intertechnology's IRFP460LC is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 280W in a RECTANGULAR package with THROUGH-HOLE terminals.
SI2319CDS-T1-BE3
SI2319CDS-T1-BE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 20A IDM, and 0.077 ohm Drain-Source On Resistance. With ENHANCEMENT MODE operation, this MOSFET has a max power dissipation of 2.5W in a SMALL OUTLINE package suitable for surface mount assemblies.
IRFZ44NSTRL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Qualification: Not Qualified; Package Shape: RECTANGULAR;
IRF3205LPBF
IRF3205LPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). With a max power dissipation of 200W and operating temperature of 175°C, it's suitable for high-power circuits requiring efficient switching capabilities.
IRFB4110PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Maximum Operating Temperature: 175 Cel; Package Body Material: PLASTIC/EPOXY;
IRF640STRLPBF
Vishay Intertechnology's IRF640STRLPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 72A IDM, 580mJ EAS, and 0.18 ohm RDS(on). With a max power dissipation of 130W and operating temperature up to 175°C, it suits various high-power electronic designs.
BSZ15DC02KDHXTMA1
Infineon BSZ15DC02KDHXTMA1 is a Power FET with N/P-Channel, 20V DS Breakdown Voltage, and 0.055 ohm RDS(ON). Commonly used in automotive applications due to AEC-Q101 standard compliance.
IRLML2244TRPBF
IRLML2244TRPBF by Infineon Technologies is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 18A Max IDM, and 0.054 ohm Max RDS(on). With a small outline package style and matte tin terminal finish, it operates b/w -55 to 150 °C, making it ideal for various power management needs.
SUM70101EL-GE3
Vishay Intertechnology's SUM70101EL-GE3 is a P-channel FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 240A pulsed drain current. Operating in enhancement mode, it has a max operating temperature of 175°C and low on-resistance of 0.0101 ohm.
FDD6637
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
FQD7P20TM
FQD7P20TM by Onsemi is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C.
IRF640STRRPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSSO-G2;
BSS138AKAR
NXP Semiconductors' BSS138AKAR is a single N-channel FET with max drain current of 0.2A and power dissipation of 0.36W. Ideal for applications requiring enhancement mode operation, such as in power management circuits or low voltage switching applications at up to 150°C operating temperature.
BSC014N06NSATMA1
BSC014N06NSATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.00145 ohm RDS(on), and 400A IDM. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has an EAS of 580mJ.
STW9N150
STMicroelectronics
STW9N150 by STMicroelectronics is a Power FET with 1500V DS Breakdown Voltage, 32A IDM, and 320W Pd. Ideal for SWITCHING applications, it features N-CHANNEL polarity, SINGLE configuration with built-in diode, and operates in ENHANCEMENT MODE.
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ECH8695R-TL-W
ECH8695R-TL-W by Onsemi is an N-CHANNEL Power FET with 11A max drain current and 1.5W power dissipation. Ideal for applications requiring high efficiency in a compact design, such as power management systems or motor control circuits. Operating up to 150°C, it features surface mount technology and tin/bismuth terminal finish for reliable performance.
ECH8661-TL-H
Sanyo Semiconductor
Power Field-Effect Transistors;
Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: Tin/Bismuth (Sn/Bi); Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6;
ECH8690-TL-H
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Finish: Tin/Bismuth (Sn/Bi); Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6;
ECH8668-TL-H
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; Minimum DS Breakdown Voltage: 20 V; Package Body Material: PLASTIC/EPOXY;
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; JESD-609 Code: e6; Maximum Pulsed Drain Current (IDM): 40 A;
ECH8660-TL-H
Power Field-Effect Transistors; JESD-609 Code: e6; Terminal Finish: Tin/Bismuth (Sn/Bi); Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
ECH8697R-TL-W
Power Field-Effect Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Tin/Bismuth (Sn/Bi);
ECH8601M-C-TL-H
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;
ECH8410
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain Current (ID): 12 A; No. of Elements: 1;
ECH8601R
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (ID): 6.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
ECH8601M
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain Current (Abs) (ID): 8 A; Maximum Drain Current (ID): 8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
ECH8402
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 10 A;
ECH8601M-TL-H
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 8 A; Minimum DS Breakdown Voltage: 24 V;
ECH8315-TL-H
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (Abs) (ID): 7.5 A; Maximum Time At Peak Reflow Temperature (s): 30;
ECH8602M
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain Current (ID): 6 A; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
ECH8309-TL-H
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e6; Peak Reflow Temperature (C): 260;
ECH8315-TL-W
Power Field-Effect Transistors; JESD-609 Code: e6; Terminal Finish: Tin/Bismuth (Sn/Bi); Moisture Sensitivity Level (MSL): 1;
ECH8411
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain Current (Abs) (ID): 9 A; Maximum Operating Temperature: 150 Cel;
ECH8622R
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT; Maximum Pulsed Drain Current (IDM): 40 A;
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