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2SAR573DFHGTL

ROHM

2SAR573DFHGTL by ROHM

ROHM 2SAR573DFHGTL is a PNP BJT transistor with hFE of 180, VCE of 50V, and IC of 3A. Ideal for amplifier applications, it features GULL WING terminals in a SMALL OUTLINE package suitable for surface mount assembly.

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1k+

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VNN

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Nova Conductors

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Ampacity Inc.

Singapore . 475 parts In-Stock

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RC Electronics

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Overview

Unlock the power of innovation with the 2SAR573DFHGTL by ROHM, a top-of-the-line Power Bipolar Junction Transistor (BJT) that promises exceptional performance and reliability. Manufactured by the trusted brand ROHM, this PNP transistor is ideal for amplifier applications, delivering superior quality and efficiency. With a maximum collector-emitter voltage of 50V and a peak reflow temperature of 260°C, this transistor offers unmatched value and benefits to customers seeking high-performance electronic components. Upgrade your projects with the 2SAR573DFHGTL and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

SMT component that allows for automated assembly processes, saving time and labor costs.

Minimum DC Current Gain (hFE): 180

High gain ensures efficient amplification of signals.

Maximum Collector-Emitter Voltage: 50 V

Can handle high voltage applications, providing versatility in circuit design.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and stability in performance.

Maximum Collector Current (IC): 3 A

High collector current rating allows for handling of larger currents, enabling use in various power applications.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency enables the transistor to operate at high frequencies, suitable for broadband amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SAR573DFHGTL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SAR573DFHGTL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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