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2SAR586JGTLL

ROHM

2SAR586JGTLL by ROHM

ROHM 2SAR586JGTLL is a PNP BJT transistor with VCEsat of 0.32V, hFE of 120, and IC of 5A. Ideal for amplifier applications due to its high transition frequency of 200MHz and max power dissipation of 40W in a small outline package. Suitable for surface mount designs with GULL WING terminals.

Median Price

$2.645

Lifecycle Status

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10

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1k+

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Chip1Stop

Japan . 436 parts In-Stock

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$2.490

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$1.050

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$0.746

10k+ parts

$0.654

436

$2.490

$1.050

$0.746

$0.654

DigiKey

USA . 2,259 parts In-Stock

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$2.800

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$1.241

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$0.998

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-

2,259

$2.800

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Mouser Electronics

USA . 1,551 parts In-Stock

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$2.800

100+ parts

$1.190

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$0.886

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$0.771

1,551

$2.800

$1.190

$0.886

$0.771

Newark

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$2.860

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$1.220

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$0.928

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1,239

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Element14

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$3.840

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$1.720

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$1.150

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Farnell

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$1.020

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$0.747

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$0.664

1,289

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$0.664

RS (Exports)

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$0.722

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$0.686

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950

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$0.722

$0.686

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Verical

USA . 436 parts In-Stock

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$1.072

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$0.836

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$0.753

436

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$0.836

$0.753

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VNN

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Nova Conductors

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Ampacity Inc.

Singapore . 976 parts In-Stock

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976

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$0.689

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CoreStaff

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$0.692

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40

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Microchip USA

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100

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Overview

Discover the power and reliability of the 2SAR586JGTLL by ROHM, a top-quality Power Bipolar Junction Transistor designed for high-performance amplification applications. Manufactured by the trusted brand ROHM, this PNP transistor offers customers exceptional value with its low VCEsat, high DC current gain, and impressive maximum operating temperature. With its Gull Wing terminal form and small outline package style, this transistor is not only easy to use but also versatile in a variety of electronic projects. Take your designs to the next level with the 2SAR586JGTLL and experience the difference that quality components can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good insulation and protection for the transistor, increasing durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and have low input impedance, making them suitable for many applications.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easy integration into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Surface Mount: YES

Surface mount compatibility makes it easier to mount the transistor directly onto a circuit board, saving space and reducing assembly time.

Maximum VCEsat: 0.32 V

Low VCEsat value indicates minimal saturation voltage drop, leading to efficient operation and lower power dissipation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and soldering onto a PCB, facilitating assembly and integration into electronic devices.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable electrical connections, ensuring stable performance in various operating conditions.

Maximum Power Dissipation (Abs): 40 W

High maximum power dissipation rating allows the transistor to handle large amounts of power, reducing the risk of overheating and failure.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact electronic designs with limited board space.

Minimum DC Current Gain (hFE): 120

Higher minimum DC current gain ensures stable and consistent amplification performance, making it ideal for precision applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature rating allows for reliable operation in a wide range of environmental conditions, ensuring long-term durability.

Maximum Collector-Base Capacitance: 100 pF

Low collector-base capacitance minimizes signal distortion and interference in high-frequency applications, ensuring clean and accurate signal amplification.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating allows the transistor to withstand higher voltage levels, increasing the range of applications it can be used in.

Transistor Element Material: SILICON

Silicon transistor element material provides high performance and reliability, making it suitable for a wide range of electronic applications.

Maximum Collector Current (IC): 5 A

High maximum collector current rating allows the transistor to handle large electrical currents, making it suitable for power amplification and switching applications.

Terminal Position: SINGLE

Single terminal position simplifies connection and integration into electronic circuits, reducing the chances of wiring errors and ensuring consistent performance.

Case Connection: COLLECTOR

Collector case connection provides a secure electrical connection point, ensuring stability and reliability in various circuit configurations.

Nominal Transition Frequency (fT): 200 MHz

High nominal transition frequency indicates fast switching speeds, making it suitable for high-frequency applications where signal response time is critical.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SAR586JGTLL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Base Capacitance:

100 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.32 V

Trade Compliance

2SAR586JGTLL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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