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2SAR573D3TL1

ROHM

2SAR573D3TL1 by ROHM

ROHM 2SAR573D3TL1 is a PNP BJT transistor with VCEsat of 0.4V, hFE of 180, and IC of 3A. Ideal for amplifier applications due to its high transition frequency of 300MHz and low collector-emitter voltage of 50V. Its GULL WING terminals and small outline package make it suitable for surface mount designs.

Median Price

$0.411

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Arrow

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$0.030

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Chip1Stop

Japan . 2,516 parts In-Stock

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DigiKey

USA . 3,428 parts In-Stock

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$1.290

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$0.537

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$0.380

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$0.300

3,428

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Mouser Electronics

USA . 2,342 parts In-Stock

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$1.290

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$0.532

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$0.377

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$0.329

2,342

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Future Electronics

Canada . 7,500 parts In-Stock

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Verical

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DF Sales Co.

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DF Sales Co.

USA . 250 parts In-Stock

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Chip Stock

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IBS Electronics

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$0.407

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NAC Semi

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CoreStaff

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$0.310

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$0.263

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Continental Prestige Electronics

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$0.874

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$0.531

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$0.348

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$0.312

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$0.312

Kepictronics

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Argo Parts USA

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Overview

Unleash the power of innovation with the 2SAR573D3TL1 by ROHM. As a leading manufacturer in the industry, ROHM delivers top-notch Power Bipolar Junction Transistors that guarantee quality and reliability. Ideal for amplifier applications, this PNP transistor offers a maximum VCEsat of 0.4V and a minimum DC current gain of 180. With a compact and durable design featuring a small outline package style, this transistor is perfect for surface mount applications. Experience exceptional performance and efficiency with the 2SAR573D3TL1, providing customers with unmatched value and benefits for their electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies design and integration into circuits, making it easier to use.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and improving efficiency.

Maximum VCEsat: 0.4 V

Low saturation voltage results in minimal power loss and efficient operation of the transistor.

Package Shape: RECTANGULAR

Rectangular shape provides easy integration into PCB layouts and facilitates efficient routing of connections.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections on the PCB, enhancing the overall performance of the transistor.

Maximum Power Dissipation (Abs): 10 W

High power dissipation capability allows the transistor to handle higher power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables dense circuit layouts for compact designs.

Minimum DC Current Gain (hFE): 180

Higher minimum DC current gain ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate reliably under elevated temperature conditions.

Maximum Collector-Base Capacitance: 35 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance of the transistor.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage rating provides a safety margin for voltage spikes and overvoltage conditions.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the transistor suitable for various applications.

Maximum Collector Current (IC): 3 A

High maximum collector current rating allows the transistor to handle higher current loads in demanding applications.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and eases soldering, ensuring reliable connections in the circuit.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and facilitates efficient heat dissipation from the transistor.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency enables the transistor to achieve high-speed switching and amplification in RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SAR573D3TL1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

35 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SAR573D3TL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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