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2SAR574D3FRATL

ROHM

2SAR574D3FRATL by ROHM

ROHM 2SAR574D3FRATL is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 2A. Ideal for amplifier applications, it has a max operating temperature of 150°C and collector-emitter voltage of 80V. Suitable for surface mount with GULL WING terminals in a small outline package.

Median Price

$1.448

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 528 parts In-Stock

1+ parts

$1.800

100+ parts

$0.787

1k+ parts

$0.577

10k+ parts

$0.509

528

$1.800

$0.787

$0.577

$0.509

Mouser Electronics

USA . 7,500 parts In-Stock

1+ parts

$2.190

100+ parts

$0.959

1k+ parts

$0.703

10k+ parts

$0.620

7,500

$2.190

$0.959

$0.703

$0.620

Newark

USA . 528 parts In-Stock

1+ parts

$2.190

100+ parts

$0.959

1k+ parts

$0.703

10k+ parts

-

528

$2.190

$0.959

$0.703

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Elektronika Sales Private Limited

India . 80,000 parts In-Stock

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80,000

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Verical

USA . 2,355 parts In-Stock

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$1.078

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2,355

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$1.078

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Element14

Singapore . 934 parts In-Stock

1+ parts

-

100+ parts

$1.096

1k+ parts

$0.694

10k+ parts

$0.686

934

-

$1.096

$0.694

$0.686

Chip1Stop

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

$0.920

1k+ parts

$0.851

10k+ parts

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500

-

$0.920

$0.851

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 2,355 parts In-Stock

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2,355

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 2,355 parts In-Stock

1+ parts

$1.234

100+ parts

$0.516

1k+ parts

$0.468

10k+ parts

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2,355

$1.234

$0.516

$0.468

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Microchip USA

USA . 9,343 parts In-Stock

1+ parts

$4.739

100+ parts

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9,343

$4.739

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Infinite Electronics LLP (Excess)

. 40,058 parts In-Stock

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40,058

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Overview

Experience the power of reliable performance with the 2SAR574D3FRATL by ROHM. As a trusted manufacturer in the industry, ROHM delivers high-quality Power Bipolar Junction Transistors that are perfect for amplifier applications. With a low VCEsat and high DC current gain, this PNP transistor offers exceptional value and benefits to customers seeking efficiency and reliability. Trust ROHM to provide you with top-notch products that exceed expectations, making your projects a success every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that protects the transistor and allows for easy handling and installation.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing flexibility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration, making it easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio or signal processing applications.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum VCEsat: 0.4 V

Low collector-emitter saturation voltage minimizes power loss and improves efficiency of the transistor.

Package Shape: RECTANGULAR

Compact and space-saving design that fits well in modern electronic devices with limited space.

Terminal Form: GULL WING

Facilitates easy soldering on PCBs, ensuring secure connections and reliable performance.

Maximum Power Dissipation (Abs): 10 W

High power handling capability allows for use in demanding applications without the risk of overheating or damage.

Package Style (Meter): SMALL OUTLINE

Compact form factor that saves space on the PCB and enables dense circuit layouts for efficient design.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures stable and reliable amplification, suitable for critical signal processing tasks.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions without performance degradation.

Maximum Collector-Base Capacitance: 30 pF

Low capacitance reduces signal distortion and improves high-frequency performance in amplification circuits.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating ensures reliable operation in circuits with varying voltage levels.

Transistor Element Material: SILICON

High-quality silicon material ensures stable and consistent transistor performance over time.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling of substantial current loads in various amplification applications.

Terminal Position: SINGLE

Simplified terminal layout for easy connectivity and PCB integration, reducing the risk of errors during assembly.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation, ensuring optimal performance under high-power conditions.

Reference Standard: AEC-Q101

Compliance with automotive industry standards ensures high reliability and performance in automotive applications.

Nominal Transition Frequency (fT): 280 MHz

High transition frequency enables efficient amplification of high-frequency signals, suitable for various communication and RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SAR574D3FRATL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

2SAR574D3FRATL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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