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TCP-4156UB-DT

Onsemi

TCP-4156UB-DT by Onsemi

Onsemi's TCP-4156UB-DT is a telecom IC with 4 terminals in a grid array package. It operates b/w -30 to 85 °C, with terminal finish of nickel gold and very thin profile at 0.345mm height. Ideal for telecom interface applications requiring fine pitch and bottom terminal position.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,438 parts In-Stock

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2,438

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Digiode

USA . 391 parts In-Stock

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391

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 24,502 parts In-Stock

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24,502

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TANS Electronics

Latvia . 6,488 parts In-Stock

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6,488

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Kulean Microsystems

USA . 5,301 parts In-Stock

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5,301

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Problanco Electronics

Mexico . 4,283 parts In-Stock

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4,283

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SupplyDigital Components

Austria . 3,719 parts In-Stock

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3,719

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Corphita

USA . 2,335 parts In-Stock

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2,335

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Corohmni

South Africa . 486 parts In-Stock

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486

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UHIMA Technologies

Türkiye . 219 parts In-Stock

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Overview

Enhance your telecom devices with the TCP-4156UB-DT by Onsemi and experience top-notch quality and reliability. Onsemi, a trusted manufacturer in the industry, ensures that this product delivers exceptional performance and durability. With its versatile applications in telecom interfaces, this product offers customers unparalleled value, benefits, and advantages. Upgrade your systems with the TCP-4156UB-DT and enjoy seamless connectivity and superior functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IC, ensuring reliable performance over time.

Surface Mount: YES

Surface mount capability allows for easier integration into modern electronic devices and PCBs.

Maximum Operating Temperature: 85 °C

This high operating temperature range ensures the IC can function in a variety of environments without overheating.

Terminal Finish: NICKEL GOLD

The nickel gold finish on the terminals offers excellent conductivity and corrosion resistance, enhancing the reliability and longevity of the IC.

Width: 0.609 mm

The compact width of the IC makes it suitable for space-constrained applications, saving valuable board space.

Technical Specifications

Other Function Telecom Interface ICs TCP-4156UB-DT attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Onsemi

Specs

JESD-30 Code:

R-PBGA-B4

JESD-609 Code:

e4

Length:

1.009 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.345 mm

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL GOLD

Terminal Form:

Terminal Pitch:

.42 mm

Terminal Position:

BOTTOM

Width:

.609 mm

Trade Compliance

TCP-4156UB-DT Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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