Loading...

SGP23N60UFDTU

Onsemi

SGP23N60UFDTU by Onsemi

SGP23N60UFDTU by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 23A. It is commonly used in motor control applications due to its nominal turn on time of 55ns and built-in diode configuration.

Median Price

$1.050

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 289 parts In-Stock

1+ parts

$1.050

100+ parts

$0.989

1k+ parts

$0.894

10k+ parts

$0.894

289

$1.050

$0.989

$0.894

$0.894

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 699 parts In-Stock

1+ parts

$0.998

100+ parts

-

1k+ parts

-

10k+ parts

-

699

$0.998

-

-

-

Vyrian

USA . 5,580 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,580

-

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

750

-

-

-

-

Cyclops Electronics Ltd

UK . 135 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

135

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 136 parts In-Stock

1+ parts

$0.890

100+ parts

-

1k+ parts

-

10k+ parts

-

136

$0.890

-

-

-

Corphita

USA . 2,729 parts In-Stock

1+ parts

$0.945

100+ parts

-

1k+ parts

-

10k+ parts

-

2,729

$0.945

-

-

-

Corohmni

South Africa . 240 parts In-Stock

1+ parts

$1.050

100+ parts

-

1k+ parts

-

10k+ parts

-

240

$1.050

-

-

-

Advanced Electronics

New Zealand . 650 parts In-Stock

1+ parts

$1.853

100+ parts

$1.686

1k+ parts

$1.519

10k+ parts

-

650

$1.853

$1.686

$1.519

-

AZTECH Wire

Italy . 694 parts In-Stock

1+ parts

$8.200

100+ parts

-

1k+ parts

-

10k+ parts

-

694

$8.200

-

-

-

Component Stockers USA

USA . 724 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

724

$99.990

-

-

-

Perfect Parts

USA . 36,960 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

36,960

-

-

-

-

Lixinc

USA . 19,582 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,582

-

-

-

-

Kulean Microsystems

USA . 7,575 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,575

-

-

-

-

TANS Electronics

Latvia . 6,816 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,816

-

-

-

-

Authorized Procurement Solutions

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Kepictronics

USA . 4,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,100

-

-

-

-

SupplyDigital Components

Austria . 2,878 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,878

-

-

-

-

Problanco Electronics

Mexico . 1,061 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,061

-

-

-

-

Supply Digital

USA . 872 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

872

-

-

-

-

Bastille Electronics

Australia . 616 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

616

-

-

-

-

ChipstoGo Electronic ltd

UK . 214 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

214

-

-

-

-

UHIMA Technologies

Türkiye . 109 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

109

-

-

-

-

Overview

Onsemi's SGP23N60UFDTU is a high-quality Insulated Gate Bipolar Transistor (IGBT) that offers numerous advantages. Its manufacturer, Onsemi, is known for their commitment to excellence and innovation, ensuring that customers receive a reliable and top-notch product. This IGBT is ideal for motor control applications, providing efficient and precise control over motors. With its single configuration and built-in diode, it simplifies installation and enhances performance. The SGP23N60UFDTU delivers exceptional value to customers with its impressive features and benefits, including a maximum collector-emitter voltage of 600V, a maximum collector current of 23A, and a nominal turn-off time of 320ns. Experience the power and reliability of Onsemi's SGP23N60UFDTU for your motor control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the IGBT, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current conduction and high power handling capability.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode for freewheeling protection.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, providing efficient power switching and control.

Package Shape: RECTANGULAR

Facilitates easy mounting and connection in various electronic systems.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections on circuit boards, improving overall reliability.

Nominal Turn Off Time (toff): 320 ns

Allows for fast switching and response times, critical for high-frequency applications.

No. of Terminals: 3

Simplifies connections and reduces complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting and heat dissipation in electronic systems.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 600 V

Allows for high voltage capability, suitable for a wide range of applications.

Transistor Element Material: SILICON

Provides reliable and consistent performance over a wide temperature range.

Maximum Collector Current (IC): 23 A

Capable of handling high current levels for demanding applications.

Terminal Finish: MATTE TIN

Provides a durable and corrosion-resistant finish for long-term reliability.

Terminal Position: SINGLE

Simplifies connections and reduces potential points of failure in the system.

Nominal Turn On Time (ton): 55 ns

Offers fast turn-on time, essential for efficient power switching and control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGP23N60UFDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

320 ns

Nominal Turn On Time (ton):

55 ns

Trade Compliance

SGP23N60UFDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20