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SBE809

Onsemi

SBE809 by Onsemi

SBE809 by Onsemi is a surface mount diode with a max reverse recovery time of 0.01 us and max reverse current of 5 uA. It has a reverse test voltage of 15 V, making it suitable for applications requiring fast switching speeds and low power consumption in temperature range from -55 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,153 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 7,539 parts In-Stock

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Problanco Electronics

Mexico . 5,877 parts In-Stock

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Kulean Microsystems

USA . 3,110 parts In-Stock

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Corphita

USA . 2,236 parts In-Stock

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SupplyDigital Components

Austria . 2,181 parts In-Stock

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UHIMA Technologies

Türkiye . 230 parts In-Stock

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Corohmni

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Overview

Discover the superior quality and reliability of the SBE809 by Onsemi, a cutting-edge Other Function Diode perfect for a wide range of applications. With its advanced manufacturing techniques and precision engineering, Onsemi ensures that this diode delivers exceptional performance, efficiency, and durability. Whether you need it for power supplies, signal processing, or voltage regulation, the SBE809 offers unmatched value, benefits, and advantages to meet all your needs. Trust Onsemi to provide you with the best diode solution on the market.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.01 us

An extremely fast reverse recovery time ensures efficient switching performance, important for applications requiring quick response times.

Maximum Reverse Current: 5 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Reverse Test Voltage: 15 V

A high reverse test voltage rating ensures the diode can handle reverse polarity without breakdown, increasing its reliability and lifespan.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable operation in a wide range of environments, making this diode suitable for various applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature enables the diode to function in cold environments without sacrificing performance, increasing its versatility.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop minimizes power dissipation and heat generation, improving overall efficiency of the diode.

Maximum Repetitive Peak Reverse Voltage: 30 V

High repetitive peak reverse voltage rating ensures the diode can withstand transient voltage spikes and surges, enhancing its reliability in high voltage applications.

Technical Specifications

Other Function Diodes SBE809 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.55 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

5 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBE809 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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