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SBE813

Onsemi

SBE813 by Onsemi

The Onsemi SBE813 is a surface mount diode with a max reverse recovery time of 0.02 us and a max reverse current of 42 uA. It has a reverse test voltage of 15 V, making it suitable for applications requiring fast switching speeds and low power consumption in temperature ranges from -55 to 125 °C.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,309 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 6,276 parts In-Stock

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TANS Electronics

Latvia . 3,194 parts In-Stock

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SupplyDigital Components

Austria . 3,139 parts In-Stock

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UHIMA Technologies

Türkiye . 547 parts In-Stock

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Problanco Electronics

Mexico . 465 parts In-Stock

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Corohmni

South Africa . 351 parts In-Stock

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Corphita

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Overview

Discover the SBE813 by Onsemi, a high-quality Other Function Diode that offers unmatched performance and reliability. With fast reverse recovery time and low reverse current, this diode is perfect for a wide range of applications. Whether you're looking to improve efficiency in power supplies or enhance signal processing in telecommunications, the SBE813 delivers exceptional value and benefits. Trust in Onsemi's reputation for excellence and choose the SBE813 for your next project.

Feature Benefit Bullets

Surface Mount: YES

Surface mount diodes are easy to install and are more compact, making them suitable for small electronic devices.

Maximum Reverse Recovery Time: 0.02 us

The low reverse recovery time ensures faster switching speeds and reduces power loss in the circuit, making the product efficient.

Maximum Reverse Current: 42 uA

Low reverse current means less power dissipation and improved overall performance of the diode.

Reverse Test Voltage: 15 V

Higher reverse test voltage provides better protection against reverse voltage spikes, increasing the reliability of the product.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions and operate reliably in a wider range of applications.

Minimum Operating Temperature: -55 °C

The ability to operate at low temperatures makes this diode suitable for a variety of industrial and automotive applications that require reliable performance in cold environments.

Maximum Forward Voltage (VF): 0.485 V

Low forward voltage drop ensures minimal power loss and efficient operation, making the product ideal for applications where energy efficiency is crucial.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage rating provides overvoltage protection, making the diode suitable for circuits that may experience voltage spikes or surges.

Technical Specifications

Other Function Diodes SBE813 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.485 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

42 uA

Maximum Reverse Recovery Time:

.02 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBE813 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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