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SBE804

Onsemi

SBE804 by Onsemi

The Onsemi SBE804 is a surface mount diode with a max reverse recovery time of 0.01 us and reverse test voltage of 15 V. It operates b/w -55 to 125 °C and has a max forward voltage of 0.55 V. Ideal for applications requiring low reverse current and high repetitive peak reverse voltage.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,478 parts In-Stock

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Digiode

USA . 1,766 parts In-Stock

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Problanco Electronics

Mexico . 6,603 parts In-Stock

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Kulean Microsystems

USA . 2,900 parts In-Stock

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Corphita

USA . 2,143 parts In-Stock

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TANS Electronics

Latvia . 1,455 parts In-Stock

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UHIMA Technologies

Türkiye . 670 parts In-Stock

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670

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SupplyDigital Components

Austria . 428 parts In-Stock

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Corohmni

South Africa . 233 parts In-Stock

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Overview

Elevate your electronic projects with the SBE804 by Onsemi, a high-quality Other Function Diode that offers unparalleled reliability and performance. With surface mount capabilities and a maximum reverse recovery time of 0.01 us, this diode is perfect for a wide range of applications. From power supplies to signal processing, the SBE804 provides exceptional value and efficiency. Trust Onsemi's reputation for excellence and invest in a product that delivers on its promises. Make the smart choice with the SBE804 and take your projects to the next level.

Feature Benefit Bullets

Surface Mount: YES

Surface mount allows for easy and compact integration into circuit boards, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.01 us

The fast reverse recovery time ensures efficient and rapid switching performance, making this diode suitable for high-frequency applications.

Maximum Reverse Current: 15 uA

Low reverse current minimizes power losses and improves overall efficiency of the circuit.

Reverse Test Voltage: 15 V

The diode can withstand up to 15 volts in reverse bias without breakdown, ensuring reliability in various operating conditions.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance in harsh environments or under heavy loads.

Minimum Operating Temperature: -55 °C

The wide operating temperature range enables the diode to function in extreme cold conditions without impacting performance.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop results in minimal power dissipation and heat generation, making the diode energy-efficient.

Maximum Repetitive Peak Reverse Voltage: 30 V

The diode can handle repetitive peak reverse voltages up to 30 volts, providing protection against voltage spikes and surges in the circuit.

Technical Specifications

Other Function Diodes SBE804 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.55 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

15 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBE804 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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