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SBE803

Onsemi

SBE803 by Onsemi

The Onsemi SBE803 is a surface mount diode with a max reverse recovery time of 0.01 us and a max reverse current of 50 uA. It has a reverse test voltage of 45 V, making it suitable for applications requiring fast switching speeds and low leakage currents in temperature range from -55 to 125 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,553 parts In-Stock

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Digiode

USA . 809 parts In-Stock

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809

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Kepictronics

USA . 39,000 parts In-Stock

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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Problanco Electronics

Mexico . 8,002 parts In-Stock

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SupplyDigital Components

Austria . 7,088 parts In-Stock

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TANS Electronics

Latvia . 6,294 parts In-Stock

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Kulean Microsystems

USA . 2,002 parts In-Stock

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Corphita

USA . 1,990 parts In-Stock

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Corohmni

South Africa . 190 parts In-Stock

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UHIMA Technologies

Türkiye . 21 parts In-Stock

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Overview

Experience superior quality and performance with the Onsemi SBE803. As a leading manufacturer in the industry, Onsemi brings you the best in Other Function Diodes. This surface mount diode offers fast reverse recovery time, low reverse current, and high reverse test voltage, making it ideal for various applications. With a wide operating temperature range and low forward voltage, the SBE803 provides exceptional value and reliability for your projects. Upgrade to Onsemi SBE803 for unparalleled benefits and advantages.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.01 us

Fast reverse recovery time ensures efficient and quick switching performance, making it suitable for high-speed applications.

Maximum Reverse Current: 50 uA

Low reverse current minimizes power loss and improves overall energy efficiency of the diode.

Reverse Test Voltage: 45 V

High reverse test voltage provides a good margin of safety and reliability in preventing reverse breakdown.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this diode can function effectively even in extremely cold environments.

Maximum Forward Voltage (VF): 0.7 V

Low forward voltage drop results in minimal power dissipation and heat generation, increasing efficiency.

Maximum Repetitive Peak Reverse Voltage: 90 V

High peak reverse voltage rating ensures the diode can handle fluctuations in reverse voltage without damage.

Technical Specifications

Other Function Diodes SBE803 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.7 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

90 V

Maximum Reverse Current:

50 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

45 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBE803 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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