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SBE808

Onsemi

SBE808 by Onsemi

SBE808 by Onsemi is a surface mount diode with a max reverse recovery time of 0.01 us and max reverse current of 3 uA. It operates b/w -55 to 150 °C and has a max forward voltage of 0.48 V, making it ideal for various electronic applications requiring low power consumption and fast switching capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,466 parts In-Stock

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Digiode

USA . 1,308 parts In-Stock

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Kulean Microsystems

USA . 3,524 parts In-Stock

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Problanco Electronics

Mexico . 2,548 parts In-Stock

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Corphita

USA . 2,131 parts In-Stock

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SupplyDigital Components

Austria . 1,462 parts In-Stock

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TANS Electronics

Latvia . 1,388 parts In-Stock

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Corohmni

South Africa . 290 parts In-Stock

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UHIMA Technologies

Türkiye . 156 parts In-Stock

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Overview

Experience the ultimate performance with the SBE808 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. The SBE808, belonging to the category of Other Function Diodes, offers superior surface mount technology, making it a versatile choice for various applications. With a lightning-fast maximum reverse recovery time of 0.01 us and low maximum reverse current of 3 uA, this diode guarantees efficient operation at temperatures ranging from -55 °C to 150 °C. Trust in the SBE808 to deliver exceptional value, benefits, and advantages to meet your needs and exceed your expectations.

Feature Benefit Bullets

Surface Mount: YES

Surface mount diodes are small in size, making them suitable for compact electronic devices and circuit boards.

Maximum Reverse Recovery Time: 0.01 us

The low reverse recovery time allows for fast switching speeds in electronic circuits, improving overall performance.

Maximum Reverse Current: 3 uA

The low reverse current ensures minimal power loss and high efficiency in the circuit.

Reverse Test Voltage: 6 V

The reverse test voltage of 6V makes it suitable for low voltage applications, providing protection against reverse polarity.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures, ensuring reliability in various environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows this diode to function efficiently even in cold conditions, making it versatile for different applications.

Maximum Forward Voltage (VF): 0.48 V

The low forward voltage drop ensures minimal energy loss and efficient power conversion, making it ideal for energy-sensitive applications.

Maximum Repetitive Peak Reverse Voltage: 15 V

The high repetitive peak reverse voltage rating provides protection against voltage spikes and surges in the circuit, enhancing the diode's durability and longevity.

Technical Specifications

Other Function Diodes SBE808 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.48 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

3 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

6 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBE808 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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