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SBE811

Onsemi

SBE811 by Onsemi

SBE811 by Onsemi is a surface mount diode with max reverse recovery time of 0.02 us, max reverse current of 30 uA, and max repetitive peak reverse voltage of 30 V. It operates b/w -55 to 125 °C and has a forward voltage of 0.45 V. Ideal for applications requiring fast switching and low power consumption in electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,419 parts In-Stock

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Vyrian

USA . 830 parts In-Stock

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TANS Electronics

Latvia . 7,381 parts In-Stock

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Problanco Electronics

Mexico . 6,635 parts In-Stock

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Kulean Microsystems

USA . 2,577 parts In-Stock

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Corphita

USA . 1,901 parts In-Stock

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SupplyDigital Components

Austria . 1,173 parts In-Stock

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UHIMA Technologies

Türkiye . 451 parts In-Stock

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Corohmni

South Africa . 173 parts In-Stock

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Overview

Unleash the power of innovation with the SBE811 by Onsemi, a high-quality Other Function Diode that guarantees superior performance and reliability. Designed for surface mount applications, this diode boasts a maximum reverse recovery time of 0.02 us and a maximum forward voltage of 0.45 V. From protecting circuits to rectifying current, the SBE811 offers limitless possibilities for your electronic projects. Trust Onsemi's expertise and elevate your designs with the cutting-edge technology of the SBE811.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, making it convenient for mass production.

Maximum Reverse Recovery Time: 0.02 us

The low reverse recovery time ensures quick switching, reducing energy loss and improving overall efficiency.

Maximum Reverse Current: 30 uA

The low reverse current helps in minimizing power consumption and heat generation in the circuit.

Reverse Test Voltage: 15 V

The high reverse test voltage ensures reliable operation and protection against reverse polarity.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions and extended use.

Minimum Operating Temperature: -55 °C

The wide range of operating temperatures allows for use in both high and low temperature environments, increasing versatility.

Maximum Forward Voltage (VF): 0.45 V

The low forward voltage drop results in minimal power loss and higher efficiency in the circuit.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage rating ensures reliable performance and protection against voltage spikes.

Technical Specifications

Other Function Diodes SBE811 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.45 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

30 uA

Maximum Reverse Recovery Time:

.02 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBE811 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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