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BAT74/G,215

NXP Semiconductors

BAT74/G,215 by NXP Semiconductors

BAT74/G,215 by NXP Semiconductors is a surface mount diode ideal for high-speed switching applications. It features a max reverse recovery time of 0.005 µs and operates b/w -65 °C to 125 °C, ensuring reliability in various environments. With a peak reverse voltage of 30 V, it's perfect for low-power circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 117,000 parts In-Stock

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Digiode

USA . 3,319 parts In-Stock

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3,319

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Anansix

USA . 577 parts In-Stock

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577

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Vyrian

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463

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One Stop Electronics

USA . 742 parts In-Stock

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$2.010

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Northwest PG Solutions

USA . 110 parts In-Stock

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$3.019

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UNI Independent Distributors

Spain . 5,975 parts In-Stock

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Corphita

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Native Components

USA . 864 parts In-Stock

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Overview

Experience unmatched reliability with the BAT74/G,215 from NXP Semiconductors, a trusted leader in innovation. This versatile surface-mount diode excels in applications across consumer electronics and automotive sectors, ensuring efficient performance even in extreme conditions. With its low power dissipation and rapid recovery time, it enhances your designs while maximizing energy savings. Choose NXP for unparalleled quality and elevate your projects to new heights!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into compact applications, saving space on PCB layouts.

Maximum Reverse Recovery Time: 0.005 us

A low reverse recovery time enables high-speed switching applications, improving overall circuit performance.

Maximum Reverse Current: 2 uA

The minimal reverse current ensures low leakage and enhances energy efficiency, making it suitable for low-power applications.

Reverse Test Voltage: 25 V

With a high reverse test voltage, this diode can withstand power surges, improving reliability in various applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for use in harsh environments, ensuring functionality in demanding conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature makes this diode suitable for extreme conditions, expanding its application range.

Maximum Power Dissipation: 0.23 W

The diode's ability to dissipate power effectively prevents overheating, ensuring stable operation and longevity.

Maximum Forward Voltage (VF): 0.24 V

A low forward voltage drop enhances efficiency in low-voltage circuits, reducing energy loss and heat generation.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a high peak reverse voltage rating, this diode can handle voltage spikes effectively, ensuring durability and protection.

Technical Specifications

Other Function Diodes BAT74/G,215 attributes and parameters. Explore more Other Function Diodes devices from NXP Semiconductors

Specs

Maximum Forward Voltage (VF):

.24 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Power Dissipation:

.23 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.005 us

Reverse Test Voltage:

25 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

BAT74/G,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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