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SBE806

Onsemi

SBE806 by Onsemi

The Onsemi SBE806 is a surface mount diode with max reverse recovery time of 0.01 us, max reverse current of 15 uA, and max repetitive peak reverse voltage of 50 V. It operates b/w -55 to 125 °C and has a forward voltage of 0.55 V. Ideal for applications requiring fast switching and low power consumption.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 989 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 7,941 parts In-Stock

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SupplyDigital Components

Austria . 7,938 parts In-Stock

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Kulean Microsystems

USA . 5,373 parts In-Stock

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Corphita

USA . 1,669 parts In-Stock

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Problanco Electronics

Mexico . 744 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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UHIMA Technologies

Türkiye . 2 parts In-Stock

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Overview

Discover the exceptional quality and reliability of the SBE806 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch performance and durability in all their products. The SBE806, belonging to the category of Other Function Diodes, is perfect for a wide range of applications. With its surface mount capability and impressive specifications, this diode offers unparalleled value and benefits to customers. Upgrade your projects with the SBE806 and experience the advantages it brings to your applications.

Feature Benefit Bullets

Surface Mount: YES

Easy and convenient surface mount installation makes this product suitable for a wide range of applications.

Maximum Reverse Recovery Time: 0.01 us

The fast reverse recovery time ensures efficient operation and responsiveness in switching applications.

Maximum Reverse Current: 15 uA

Low reverse current helps minimize power losses and improves overall efficiency of the diode.

Reverse Test Voltage: 15 V

The reverse test voltage provides a good safety margin for the diode in various operating conditions.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable performance even in demanding environments.

Minimum Operating Temperature: -55 °C

Wide range of operating temperatures ensures the diode can be used in various temperature conditions without performance degradation.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop minimizes power loss and heat generation in the circuit.

Maximum Repetitive Peak Reverse Voltage: 50 V

The high repetitive peak reverse voltage rating provides a good safety margin for protection against voltage spikes and surges.

Technical Specifications

Other Function Diodes SBE806 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.55 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

15 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBE806 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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