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SBE807

Onsemi

SBE807 by Onsemi

The Onsemi SBE807 is a surface mount diode with a fast reverse recovery time of 0.01 us and low reverse current of 15 uA. It operates b/w -55 to 125 °C and has a max forward voltage of 0.5 V, making it ideal for high-speed applications in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,840 parts In-Stock

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Vyrian

USA . 626 parts In-Stock

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TANS Electronics

Latvia . 7,234 parts In-Stock

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Problanco Electronics

Mexico . 4,032 parts In-Stock

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UHIMA Technologies

Türkiye . 767 parts In-Stock

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SupplyDigital Components

Austria . 762 parts In-Stock

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Corphita

USA . 705 parts In-Stock

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Corohmni

South Africa . 129 parts In-Stock

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Kulean Microsystems

USA . 69 parts In-Stock

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Overview

Experience the next level of performance with the SBE807 by Onsemi. As a renowned manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their products. The SBE807 is a versatile diode perfect for various applications, offering customers unmatched value and benefits. With its fast reverse recovery time and low reverse current, this diode ensures efficient operation at extreme temperatures. Trust Onsemi to deliver cutting-edge solutions with the SBE807.

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.01 us

The low reverse recovery time ensures fast switching speeds and efficient operation of the diode, making it suitable for high-frequency applications.

Maximum Reverse Current: 15 uA

The low reverse current ensures minimal leakage and power loss, improving overall efficiency and performance of the diode.

Reverse Test Voltage: 16 V

The high reverse test voltage rating provides a safety margin and reliability in preventing breakdown or failure under reverse bias conditions.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable operation in a wide range of environmental conditions, ensuring stability and longevity of the diode.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the diode can function even in extreme cold environments, making it versatile and suitable for various applications.

Maximum Forward Voltage (VF): 0.5 V

The low forward voltage drop ensures minimal power loss and efficient conduction, making the diode suitable for energy-efficient designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage rating allows for reliable operation under varying reverse voltage conditions, making the diode versatile and robust for different applications.

Technical Specifications

Other Function Diodes SBE807 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

15 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

16 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBE807 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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