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UC1610DWTR

Texas Instruments

UC1610DWTR by Texas Instruments

UC1610DWTR by Texas Instruments is a surface mount diode with 1000uA reverse current, 40V reverse test voltage, and 1W power dissipation. It operates b/w -55°C to 125°C and has a max forward voltage of 1.3V. Ideal for applications requiring high reverse voltage protection in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,230 parts In-Stock

1+ parts

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2,230

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Digiode

USA . 2,006 parts In-Stock

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2,006

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 867 parts In-Stock

1+ parts

$0.010

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867

$0.010

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Parana Technologies

USA . 724 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

$1.443

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724

$0.072

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$1.443

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DigiPath Technology Company

USA . 646 parts In-Stock

1+ parts

$0.079

100+ parts

$0.073

1k+ parts

-

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646

$0.079

$0.073

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ChromeModa Solutions

Germany . 4,385 parts In-Stock

1+ parts

$0.081

100+ parts

$0.066

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4,385

$0.081

$0.066

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IDEA Electronic Components Group

UK . 1,161 parts In-Stock

1+ parts

$0.081

100+ parts

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$0.073

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1,161

$0.081

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$0.073

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Semicontronic

India . 1,284 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

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1,284

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 680 parts In-Stock

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$3.010

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680

$3.010

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AZTECH Wire

Italy . 217 parts In-Stock

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$15.219

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217

$15.219

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Corphita

USA . 2,653 parts In-Stock

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2,653

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Corohmni

South Africa . 284 parts In-Stock

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284

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Overview

Experience unparalleled quality and reliability with the UC1610DWTR by Texas Instruments. As a leader in the industry, Texas Instruments ensures that this product meets the highest standards for performance and durability. Ideal for a wide range of applications, the UC1610DWTR is a versatile solution that delivers exceptional value to customers. Trust in Texas Instruments to provide you with the best products on the market and experience the benefits firsthand with the UC1610DWTR.

Feature Benefit Bullets

Surface Mount: YES

Surface mount diodes are small, lightweight, and easily mounted on PCBs, making them suitable for high-density designs.

Maximum Reverse Current: 1000 uA

Low reverse current ensures minimal leakage when the diode is in its off state, improving overall circuit efficiency.

Reverse Test Voltage: 40 V

The high reverse test voltage allows the diode to handle reverse bias conditions without breakdown, adding reliability to the circuit.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this diode can withstand a wide range of environmental conditions and maintain stable performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the diode can function in cold environments without sacrificing performance.

Maximum Power Dissipation: 1 W

High power dissipation capability allows the diode to handle higher power levels without overheating, ensuring long-term reliability.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop results in minimal power loss and improved efficiency in forward bias conditions.

Maximum Repetitive Peak Reverse Voltage: 50 V

The high repetitive peak reverse voltage rating ensures the diode can handle reverse voltage spikes without damage, making it suitable for demanding applications.

Technical Specifications

Other Function Diodes UC1610DWTR attributes and parameters. Explore more Other Function Diodes devices from Texas Instruments

Specs

Maximum Forward Voltage (VF):

1.3 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Power Dissipation:

1 W

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

40 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

UC1610DWTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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