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UC1610QTR

Texas Instruments

UC1610QTR by Texas Instruments

The Texas Instruments UC1610QTR is a surface-mount diode with 1000uA reverse current, 40V reverse test voltage, and 1W power dissipation. It operates b/w -55°C to 125°C, suitable for various applications requiring a max forward voltage of 1.3V and repetitive peak reverse voltage of 50V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,461 parts In-Stock

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7,461

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Digiode

USA . 4,427 parts In-Stock

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One Stop Electronics

USA . 1,551 parts In-Stock

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$0.010

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1,551

$0.010

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Parana Technologies

USA . 132 parts In-Stock

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$0.012

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$1.405

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132

$0.012

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$1.405

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ChromeModa Solutions

Germany . 6,540 parts In-Stock

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$0.013

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$0.011

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6,540

$0.013

$0.011

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IDEA Electronic Components Group

UK . 272 parts In-Stock

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$0.013

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$0.012

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272

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$0.012

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Semicontronic

India . 310 parts In-Stock

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$1.010

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$0.985

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$0.980

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310

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 460 parts In-Stock

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$2.010

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460

$2.010

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AZTECH Wire

Italy . 362 parts In-Stock

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$7.366

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$7.366

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Corphita

USA . 3,921 parts In-Stock

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Corohmni

South Africa . 416 parts In-Stock

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DigiPath Technology Company

USA . 381 parts In-Stock

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$0.012

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381

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Overview

Enhance your electronic designs with the UC1610QTR by Texas Instruments, a high-quality Other Function Diode that offers unmatched performance and reliability. Manufactured by industry leader Texas Instruments, this surface-mount diode boasts a maximum reverse current of 1000 uA and a reverse test voltage of 40 V, making it ideal for a wide range of applications. From power supplies to automotive electronics, this diode provides exceptional value, benefits, and advantages to customers looking for top-notch quality and efficiency in their projects. Trust Texas Instruments for all your diode needs and experience the difference in performance today.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy integration onto PCBs, saving space and making assembly process more efficient.

Maximum Reverse Current: 1000 uA

Ensures reliable operation under varied conditions without causing damage to the diode.

Reverse Test Voltage: 40 V

Provides a good safety margin for handling reverse voltage scenarios, enhancing durability.

Maximum Operating Temperature: 125 °C

Enables the diode to function in high temperature environments, increasing its versatility.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold temperatures, suitable for a wide range of applications.

Maximum Power Dissipation: 1 W

Can handle significant power without overheating, ensuring long-term reliability.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop leads to energy efficiency and less power loss in the circuit.

Maximum Repetitive Peak Reverse Voltage: 50 V

Provides protection against voltage spikes, improving the overall robustness of the diode.

Technical Specifications

Other Function Diodes UC1610QTR attributes and parameters. Explore more Other Function Diodes devices from Texas Instruments

Specs

Maximum Forward Voltage (VF):

1.3 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Power Dissipation:

1 W

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

40 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

UC1610QTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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