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SPD221A

Onsemi

SPD221A by Onsemi

SPD221A by Onsemi is a SCHOTTKY RECTIFIER DIODE with 0.9V VF, 0.05A output current, and 4V peak reverse voltage. It's surface mountable and ideal for applications requiring low forward voltage drop and high efficiency in power supplies or rectification circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,064 parts In-Stock

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Vyrian

USA . 819 parts In-Stock

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TANS Electronics

Latvia . 7,593 parts In-Stock

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7,593

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Problanco Electronics

Mexico . 7,377 parts In-Stock

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Kulean Microsystems

USA . 4,058 parts In-Stock

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SupplyDigital Components

Austria . 3,146 parts In-Stock

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UHIMA Technologies

Türkiye . 350 parts In-Stock

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350

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Corphita

USA . 204 parts In-Stock

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Corohmni

South Africa . 201 parts In-Stock

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Overview

The Onsemi SPD221A is a high-quality rectifier diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. Whether you're looking to improve the efficiency of your power supply or enhance the performance of your electronic devices, the SPD221A is the perfect solution. With its Schottky technology and maximum output current of 0.05 A, this diode delivers exceptional value and benefits to customers. Trust Onsemi to provide you with the best quality diodes for all your needs.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes this product easy to install on printed circuit boards, saving space and allowing for efficient assembly.

Diode Type: RECTIFIER DIODE

Rectifier diodes are commonly used in power supplies and help to convert alternating current (AC) to direct current (DC), making this product suitable for various applications.

Maximum Forward Voltage (VF): 0.9 V

The low forward voltage drop of 0.9 V ensures minimal power loss and efficient operation of the diode in circuits.

Maximum Output Current: 0.05 A

With a maximum output current of 0.05 A, this diode can handle moderate power requirements and is suitable for low to medium power applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, making them ideal for high frequency and high efficiency circuits.

Maximum Repetitive Peak Reverse Voltage: 4 V

The 4 V repetitive peak reverse voltage rating allows this diode to handle reverse voltages efficiently, making it reliable for a range of electronic designs.

Technical Specifications

Other Function Diodes SPD221A attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Diode Type:

Maximum Forward Voltage (VF):

.9 V

Maximum Output Current:

.05 A

Maximum Repetitive Peak Reverse Voltage:

4 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Trade Compliance

SPD221A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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