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SBS804

Onsemi

SBS804 by Onsemi

The Onsemi SBS804 is a surface mount diode with a max reverse recovery time of 0.015 us and a max reverse current of 500 uA. It has a reverse test voltage of 6 V, making it suitable for applications requiring fast switching speeds and low forward voltage requirements. Ideal for use in temperature-sensitive environments with an operating range from -55 to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,388 parts In-Stock

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Digiode

USA . 1,002 parts In-Stock

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Kulean Microsystems

USA . 7,125 parts In-Stock

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Problanco Electronics

Mexico . 6,083 parts In-Stock

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TANS Electronics

Latvia . 2,421 parts In-Stock

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SupplyDigital Components

Austria . 1,787 parts In-Stock

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Assy Fe

Spain . 1,460 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 634 parts In-Stock

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Corohmni

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Overview

Discover the superior quality and reliability of the SBS804 by Onsemi. This surface mount diode offers fast recovery time, low reverse current, and high reverse test voltage, making it ideal for a wide range of applications. With a maximum operating temperature of 125 °C and a minimum of -55°C, this diode is built to withstand harsh environments while providing exceptional performance. Trust Onsemi's expertise in semiconductor manufacturing and unlock the value and benefits that the SBS804 brings to your projects.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy installation on PCBs, saving space and simplifying assembly process.

Maximum Reverse Recovery Time: 0.015 us

Fast reverse recovery time ensures efficient operation and minimal power loss in diode applications.

Maximum Reverse Current: 500 uA

Low reverse current helps in maintaining stable performance and preventing damage to the circuit.

Reverse Test Voltage: 6 V

With a reverse test voltage of 6V, this diode can handle moderate reverse voltage conditions effectively.

Maximum Operating Temperature: 125 °C

High maximum operating temperature makes this diode suitable for a wide range of applications in different environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures that the diode performs reliably even in extreme cold conditions.

Maximum Forward Voltage (VF): 0.35 V

Low forward voltage drop reduces power dissipation and improves efficiency of the diode.

Maximum Repetitive Peak Reverse Voltage: 15 V

High repetitive peak reverse voltage rating provides protection against reverse voltage spikes and surges in the circuit.

Technical Specifications

Other Function Diodes SBS804 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.35 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

500 uA

Maximum Reverse Recovery Time:

.015 us

Reverse Test Voltage:

6 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBS804 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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