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SBS808M

Onsemi

SBS808M by Onsemi

SBS808M by Onsemi is a surface mount diode with a max reverse recovery time of 0.01 us and max reverse current of 90 uA. It has a reverse test voltage of 6 V, making it suitable for applications requiring low forward voltage drop and fast switching speeds in temperature range from -55 to 125 °C.

Median Price

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Lifecycle Status

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< 1k

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Digiode

USA . 506 parts In-Stock

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Problanco Electronics

Mexico . 5,644 parts In-Stock

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TANS Electronics

Latvia . 5,189 parts In-Stock

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Kulean Microsystems

USA . 3,799 parts In-Stock

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SupplyDigital Components

Austria . 3,501 parts In-Stock

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Corphita

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Corohmni

South Africa . 56 parts In-Stock

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UHIMA Technologies

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Overview

Elevate your electronics with the SBS808M by Onsemi. Known for their superior quality and reliability, Onsemi delivers top-notch products that exceed industry standards. The SBS808M, a surface mount diode, offers lightning-fast reverse recovery time and low reverse current, making it perfect for a wide range of applications. From power supplies to automotive electronics, this diode provides exceptional performance and efficiency. Upgrade your projects with the SBS808M and experience the value and benefits that Onsemi brings to your designs.

Feature Benefit Bullets

Surface Mount: YES

Surface mount diodes are easy to assemble and take up less space compared to traditional Through-Hole diodes, making this product ideal for compact electronic devices.

Maximum Reverse Recovery Time: 0.01 us

With fast reverse recovery time, this diode ensures efficient switching and reduces power loss in high-frequency applications.

Maximum Reverse Current: 90 uA

Low reverse current minimizes leakage and improves the efficiency of the circuit, making this diode suitable for low power consumption applications.

Reverse Test Voltage: 6 V

With a reverse test voltage of 6V, this diode can handle reverse voltage spikes and provide protection to the circuit against overvoltage conditions.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows this diode to be used in a wide range of electronic devices and environments without the risk of overheating.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures reliable performance even in extreme cold conditions, making this diode suitable for a variety of applications.

Maximum Forward Voltage (VF): 0.35 V

The low forward voltage drop results in minimal power loss and low heat dissipation, making this diode energy-efficient for power-sensitive applications.

Maximum Repetitive Peak Reverse Voltage: 15 V

With a high repetitive peak reverse voltage rating, this diode can withstand voltage surges and protect the circuit from damage due to reverse voltage spikes.

Technical Specifications

Other Function Diodes SBS808M attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.35 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

90 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

6 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBS808M Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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