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SBS822

Onsemi

SBS822 by Onsemi

SBS822 by Onsemi is a surface mount diode with 0.01 us reverse recovery time, 110 uA reverse current, and 10 V reverse test voltage. It operates b/w -55 to 125 °C and has a VF of 0.39 V. Ideal for applications requiring fast switching and low forward voltage drop.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,880 parts In-Stock

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Vyrian

USA . 704 parts In-Stock

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Problanco Electronics

Mexico . 7,387 parts In-Stock

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TANS Electronics

Latvia . 3,908 parts In-Stock

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SupplyDigital Components

Austria . 1,917 parts In-Stock

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Corphita

USA . 1,551 parts In-Stock

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Kulean Microsystems

USA . 706 parts In-Stock

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UHIMA Technologies

Türkiye . 494 parts In-Stock

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Corohmni

South Africa . 112 parts In-Stock

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Overview

Unlock endless possibilities with the SBS822 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality products that meet the needs of various applications. The SBS822 is a versatile diode that offers exceptional performance and reliability. Whether you are looking to improve efficiency in power supplies or enhance signal processing, this product is the perfect solution. Experience the value and benefits that the SBS822 can bring to your projects today.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design makes it easy to install and saves space on the circuit board.

Maximum Reverse Recovery Time: 0.01 us

Fast reverse recovery time ensures efficient operation and prevents delays in switching.

Maximum Reverse Current: 110 uA

Low reverse current minimizes power loss and improves overall efficiency of the diode.

Reverse Test Voltage: 10 V

Suitable reverse test voltage for reliable performance in various applications.

Maximum Operating Temperature: 125 °C

High operating temperature range allows for use in demanding environments without risk of damage.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures reliable operation in both extreme hot and cold conditions.

Maximum Forward Voltage (VF): 0.39 V

Low forward voltage drop results in minimal power loss and efficient energy conversion.

Maximum Repetitive Peak Reverse Voltage: 20 V

High reverse voltage rating provides protection against voltage spikes and surges.

Technical Specifications

Other Function Diodes SBS822 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.39 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

110 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

10 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBS822 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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