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SBS817

Onsemi

SBS817 by Onsemi

SBS817 by Onsemi is a surface mount diode with a max reverse recovery time of 0.01 us and a max reverse current of 300 uA. It has a max repetitive peak reverse voltage of 15 V, making it suitable for applications requiring fast switching speeds and low forward voltage requirements in temperature range from -55 to 125 °C.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,963 parts In-Stock

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Problanco Electronics

Mexico . 4,373 parts In-Stock

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SupplyDigital Components

Austria . 1,136 parts In-Stock

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UHIMA Technologies

Türkiye . 958 parts In-Stock

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TANS Electronics

Latvia . 805 parts In-Stock

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Corphita

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Kulean Microsystems

USA . 674 parts In-Stock

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Corohmni

South Africa . 172 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality SBS817 by Onsemi. Manufactured by a trusted name in the industry, this surface-mount diode offers unparalleled performance and reliability. With a fast reverse recovery time of 0.01 us and low reverse current of 300 uA, this diode is perfect for a wide range of applications. Whether you're working on power supplies, voltage regulators, or signal processing circuits, the SBS817 will provide you with the value, benefits, and advantages you need to bring your projects to the next level. Trust Onsemi to deliver top-notch components for your electronics projects.

Feature Benefit Bullets

Surface Mount: YES

Ease of installation and space-saving design make it convenient for use in compact electronic devices.

Maximum Reverse Recovery Time: 0.01 us

The fast reverse recovery time ensures efficiency in switching applications and reduces energy loss.

Maximum Reverse Current: 300 uA

Low reverse current helps in minimizing power losses and enhancing overall performance.

Reverse Test Voltage: 7.5 V

Suitable for applications requiring a reverse test voltage within the specified range.

Maximum Operating Temperature: 125 °C

Can operate efficiently in high-temperature environments without compromising performance.

Minimum Operating Temperature: -55 °C

Capable of functioning at extremely low temperatures, providing versatility in various operating conditions.

Maximum Forward Voltage (VF): 0.39 V

Low forward voltage drop helps in reducing power losses and improving efficiency.

Maximum Repetitive Peak Reverse Voltage: 15 V

Designed to handle higher reverse voltages, making it suitable for a wide range of applications.

Technical Specifications

Other Function Diodes SBS817 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.39 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

300 uA

Maximum Reverse Recovery Time:

.01 us

Reverse Test Voltage:

7.5 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBS817 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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