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BAV756ST/R

NXP Semiconductors

BAV756ST/R by NXP Semiconductors

BAV756ST/R by NXP Semiconductors is a surface mount diode ideal for high-speed switching applications. It features a max reverse recovery time of 0.004 µs, a reverse test voltage of 80 V, and operates efficiently b/w -65 °C to 150 °C. This makes it suitable for various electronic circuits requiring reliable performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,648 parts In-Stock

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Vyrian

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Anansix

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295

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One Stop Electronics

USA . 832 parts In-Stock

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$2.010

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UNI Independent Distributors

Spain . 1,843 parts In-Stock

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Corphita

USA . 1,222 parts In-Stock

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Native Components

USA . 692 parts In-Stock

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Northwest PG Solutions

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Overview

Elevate your electronic designs with the BAV756ST/R from NXP Semiconductors, the trusted leader in innovation and quality. This surface mount diode promises exceptional performance and reliability, ensuring your applications run smoothly under demanding conditions. With its impressive thermal range and minimal recovery time, the BAV756ST/R is perfect for high-speed circuits, offering unmatched value that enhances efficiency and extends lifespan. Choose excellence; choose NXP!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into compact circuit layouts, making it ideal for modern electronic devices.

Maximum Reverse Recovery Time: 0.004 us

A low reverse recovery time ensures fast switching speeds, enhancing performance in high-frequency applications.

Maximum Reverse Current: 150 uA

With a low reverse current, this diode minimizes leakage in off-state conditions, improving energy efficiency.

Reverse Test Voltage: 80 V

This high reverse test voltage provides added reliability and robustness in various applications, safeguarding against breakdown.

Maximum Operating Temperature: 150 °C

A wide maximum operating temperature allows this diode to function effectively in extreme conditions, increasing its versatility.

Minimum Operating Temperature: -65 °C

The capability to operate in very low temperatures makes this diode suitable for applications in harsh environments.

Maximum Power Dissipation: 0.35 W

With a moderate power dissipation rate, this diode can efficiently handle power without overheating, ensuring reliability.

Maximum Forward Voltage (VF): 0.715 V

A low forward voltage drop leads to reduced power losses during operation, improving overall circuit efficiency.

Maximum Repetitive Peak Reverse Voltage: 90 V

The diode's ability to withstand high repetitive peak reverse voltages makes it suitable for demanding applications requiring stability.

Technical Specifications

Other Function Diodes BAV756ST/R attributes and parameters. Explore more Other Function Diodes devices from NXP Semiconductors

Specs

Maximum Forward Voltage (VF):

.715 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Power Dissipation:

.35 W

Maximum Repetitive Peak Reverse Voltage:

90 V

Maximum Reverse Current:

150 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

80 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

BAV756ST/R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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