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SBS813

Onsemi

SBS813 by Onsemi

The Onsemi SBS813 is a surface mount diode with a max reverse recovery time of 0.02 us and a max reverse current of 1400 uA. With a reverse test voltage of 15 V, it operates in temperatures ranging from -55 to 125 °C. Ideal for applications requiring low forward voltage and repetitive peak reverse voltage up to 30 V.

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Lifecycle Status

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1k+

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Digiode

USA . 1,994 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 7,440 parts In-Stock

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Problanco Electronics

Mexico . 5,758 parts In-Stock

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TANS Electronics

Latvia . 3,529 parts In-Stock

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SupplyDigital Components

Austria . 2,543 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 784 parts In-Stock

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Corohmni

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Overview

Experience the superior quality and reliability of the Onsemi SBS813 diode, a cutting-edge product that promises exceptional performance and durability. Manufactured by Onsemi, a trusted name in the industry, this surface mount diode offers a maximum reverse recovery time of 0.02 us, ensuring quick and efficient operation. With a maximum forward voltage of 0.42 V and a maximum repetitive peak reverse voltage of 30 V, the SBS813 is ideal for a wide range of applications. Trust in Onsemi to deliver innovative solutions that meet your needs and exceed your expectations. Step up your game with the SBS813 diode today!

Feature Benefit Bullets

Surface Mount: YES

Surface mount diodes are compact in size and allow for efficient PCB layout, making this product suitable for applications with limited space.

Maximum Reverse Recovery Time: 0.02 us

The low reverse recovery time ensures fast switching performance, making this diode ideal for high frequency applications.

Maximum Reverse Current: 1400 uA

The low reverse current helps in reducing power loss and improving efficiency in the circuit where this diode is used.

Reverse Test Voltage: 15 V

The diode can withstand up to 15 volts in reverse bias, providing protection against voltage spikes in the circuit.

Maximum Operating Temperature: 125 °C

With a wide operating temperature range of -55 to 125 °C, this diode can be utilized in various environmental conditions.

Minimum Operating Temperature: -55 °C

The diode can operate efficiently at low temperatures, making it suitable for applications that require reliable performance in cold environments.

Maximum Forward Voltage (VF): 0.42 V

The low forward voltage drop results in minimal power loss and improved efficiency in the circuit where this diode is utilized.

Maximum Repetitive Peak Reverse Voltage: 30 V

The diode can handle repetitive peak reverse voltages up to 30 volts, providing protection against reverse voltage spikes in the circuit.

Technical Specifications

Other Function Diodes SBS813 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.42 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

1400 uA

Maximum Reverse Recovery Time:

.02 us

Reverse Test Voltage:

15 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

SBS813 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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