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ISB-A40-0

Onsemi

ISB-A40-0 by Onsemi

ISB-A40-0 by Onsemi is a surface mount diode with max reverse current of 15uA, reverse test voltage of 16V, and max operating temp of 125 °C. It is used in applications requiring a diode with low power dissipation, such as signal rectification and voltage regulation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,997 parts In-Stock

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Vyrian

USA . 1,327 parts In-Stock

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Kulean Microsystems

USA . 8,186 parts In-Stock

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SupplyDigital Components

Austria . 4,460 parts In-Stock

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Problanco Electronics

Mexico . 3,873 parts In-Stock

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TANS Electronics

Latvia . 2,329 parts In-Stock

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UHIMA Technologies

Türkiye . 765 parts In-Stock

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Corohmni

South Africa . 475 parts In-Stock

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Corphita

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Overview

Unleash the power of innovation with the ISB-A40-0 by Onsemi. This high-quality Other Function Diode offers unparalleled performance and reliability, making it ideal for a wide range of applications. From automotive to consumer electronics, this surface mount diode is designed to meet your needs with its maximum reverse current of 15uA and impressive maximum power dissipation of 0.55W. Trust in Onsemi's reputation for excellence and elevate your projects with the ISB-A40-0 - the perfect combination of value and quality.

Feature Benefit Bullets

Surface Mount: YES

Surface mount diodes are easier to install and take up less space on the PCB, making them ideal for compact electronic devices.

Maximum Reverse Current: 15 uA

Low reverse current helps in reducing power consumption and improves overall efficiency of the circuit.

Reverse Test Voltage: 16 V

A higher reverse test voltage provides better protection against reverse voltage spikes, ensuring the longevity of the diode.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions without malfunctioning.

Minimum Operating Temperature: -40 °C

The wide temperature range allows this diode to operate in both hot and cold environments, making it versatile for various applications.

Maximum Power Dissipation: 0.55 W

With high power dissipation, this diode can handle more power without overheating, making it suitable for high-power applications.

Maximum Forward Voltage (VF): 0.55 V

Low forward voltage drop leads to lower power losses and minimal heat generation, which is beneficial for energy-efficient designs.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high repetitive peak reverse voltage rating indicates the diode's ability to handle voltage spikes without breakdown, ensuring reliability in transient conditions.

Technical Specifications

Other Function Diodes ISB-A40-0 attributes and parameters. Explore more Other Function Diodes devices from Onsemi

Specs

Maximum Forward Voltage (VF):

.55 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Power Dissipation:

.55 W

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

15 uA

Reverse Test Voltage:

16 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

ISB-A40-0 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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