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UC2610DWTR

Texas Instruments

UC2610DWTR by Texas Instruments

UC2610DWTR by Texas Instruments is a surface mount diode with 1000uA reverse current, 40V reverse test voltage, and 1W power dissipation. It operates b/w -25 to 125 °C and has a max VF of 1.3V. Ideal for applications requiring high reverse voltage protection in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,763 parts In-Stock

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Digiode

USA . 1,287 parts In-Stock

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Semicontronic

India . 1,505 parts In-Stock

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$0.010

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$0.010

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$0.010

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1,505

$0.010

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Ampacity Inc.

Singapore . 615 parts In-Stock

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$0.010

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615

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Parana Technologies

USA . 1,126 parts In-Stock

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$0.080

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$1.447

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$0.080

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DigiPath Technology Company

USA . 182 parts In-Stock

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$0.088

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$0.081

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182

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$0.081

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ChromeModa Solutions

Germany . 6,110 parts In-Stock

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$0.090

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$0.074

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IDEA Electronic Components Group

UK . 1,633 parts In-Stock

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$0.090

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$0.081

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One Stop Electronics

USA . 361 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 357 parts In-Stock

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$4.908

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Corphita

USA . 3,518 parts In-Stock

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Corohmni

South Africa . 142 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the UC2610DWTR Other Function Diode. Perfect for a wide range of applications, this surface-mount diode offers a maximum reverse current of 1000 uA and a reverse test voltage of 40V. With a maximum power dissipation of 1W and a maximum forward voltage of 1.3V, this diode operates flawlessly in temperatures ranging from -25 to 125°C. Trust in Texas Instruments for exceptional performance and efficiency in your electronic projects.

Feature Benefit Bullets

Surface Mount : YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying the assembly process.

Maximum Reverse Current : 1000 uA

The low maximum reverse current ensures efficient performance and helps prevent damage to the diode under reverse bias conditions.

Reverse Test Voltage : 40 V

The high reverse test voltage capacity provides a wide range of applications and versatility in different circuit designs.

Maximum Operating Temperature : 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising its functionality or reliability.

Minimum Operating Temperature : -25 °C

The low minimum operating temperature allows for operation in colder environments, making it suitable for a variety of operating conditions.

Maximum Power Dissipation : 1 W

The high maximum power dissipation capability ensures that the diode can handle high power levels efficiently without overheating or failing.

Maximum Forward Voltage (VF) : 1.3 V

The low maximum forward voltage drop results in minimal power loss and efficient energy conversion, making the diode an excellent choice for power-sensitive applications.

Maximum Repetitive Peak Reverse Voltage : 50 V

The high maximum repetitive peak reverse voltage capacity provides added protection against reverse voltage spikes and ensures the diode's longevity and reliability.

Technical Specifications

Other Function Diodes UC2610DWTR attributes and parameters. Explore more Other Function Diodes devices from Texas Instruments

Specs

Maximum Forward Voltage (VF):

1.3 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-25 Cel

Maximum Power Dissipation:

1 W

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

40 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

UC2610DWTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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