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BAS40-07V/A2,115

NXP Semiconductors

BAS40-07V/A2,115 by NXP Semiconductors

BAS40-07V/A2,115 by NXP Semiconductors is a surface mount diode ideal for various applications. It features a max reverse current of 10 µA, operates b/w -65 °C to 150 °C, and withstands up to 40 V reverse voltage. Perfect for signal processing and protection circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 124,000 parts In-Stock

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Vyrian

USA . 4,758 parts In-Stock

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Anansix

USA . 1,152 parts In-Stock

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Digiode

USA . 865 parts In-Stock

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One Stop Electronics

USA . 841 parts In-Stock

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$0.010

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841

$0.010

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Native Components

USA . 864 parts In-Stock

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$0.625

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Northwest PG Solutions

USA . 1,617 parts In-Stock

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UNI Independent Distributors

Spain . 7,919 parts In-Stock

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Corphita

USA . 4,089 parts In-Stock

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Overview

Unleash the power of innovation with the BAS40-07V/A2,115 from NXP Semiconductors. Crafted with precision and reliability, this surface mount diode is your go-to solution for various applications, ensuring optimal performance even in extreme temperatures. NXP's commitment to quality means you benefit from superior reliability and efficiency, making your designs more robust and impactful. Elevate your projects with a diode that stands the test of time!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into compact electronic assemblies, making it ideal for modern PCB layouts.

Maximum Reverse Current: 10 uA

With a low maximum reverse current, this diode minimizes leakage, thereby improving efficiency and reliability in sensitive applications.

Reverse Test Voltage: 40 V

A robust reverse test voltage of 40 V ensures that the diode can handle high reverse conditions, increasing durability in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this diode to function reliably in extreme environments, making it suitable for automotive and industrial applications.

Minimum Operating Temperature: -65 °C

Operating down to -65 °C enables this diode to be used in cryogenic applications and environments with severe cold conditions.

Maximum Forward Voltage (VF): 0.38 V

A low forward voltage drop of 0.38 V results in lower power loss, enhancing overall circuit efficiency, which is critical for energy-saving designs.

Maximum Repetitive Peak Reverse Voltage: 40 V

Capable of handling repetitive peak reverse voltages up to 40 V, this diode can effectively protect circuits from voltage spikes, enhancing system reliability.

Technical Specifications

Other Function Diodes BAS40-07V/A2,115 attributes and parameters. Explore more Other Function Diodes devices from NXP Semiconductors

Specs

Maximum Forward Voltage (VF):

.38 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

40 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

BAS40-07V/A2,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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