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BAS40-07/DG,215

NXP Semiconductors

BAS40-07/DG,215 by NXP Semiconductors

BAS40-07/DG,215 by NXP Semiconductors is a surface mount diode ideal for various applications. It features a max reverse current of 10 µA, operates b/w -65 °C to 150 °C, and withstands up to 40 V reverse voltage. Perfect for efficient signal processing in compact designs.

Median Price

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In-Stock Inventory

1k+

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Vyrian

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One Stop Electronics

USA . 763 parts In-Stock

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UNI Independent Distributors

Spain . 7,313 parts In-Stock

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Corphita

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Northwest PG Solutions

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Overview

Elevate your designs with the BAS40-07/DG,215 from NXP Semiconductors—where quality meets innovation. This surface-mount diode offers unparalleled performance and reliability, ensuring seamless operation in diverse applications, from automotive to industrial systems. With exceptional thermal stability and minimal reverse leakage, you can trust this diode to enhance efficiency and longevity in your projects. Choose NXP for superior craftsmanship and unlock the full potential of your electronic solutions!

Feature Benefit Bullets

Surface Mount: YES

The surface mount capability of this diode allows for compact circuit designs, improving space efficiency on PCBs and facilitating automated assembly.

Maximum Reverse Current: 10 uA

With a maximum reverse current of only 10 uA, this diode minimizes leakage current, enhancing energy efficiency and overall circuit performance.

Reverse Test Voltage: 40 V

A reverse test voltage of 40 V ensures that the diode can withstand substantial reverse biases, making it suitable for various high-voltage applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this diode to function reliably in extreme thermal conditions, ensuring durability and longevity in demanding environments.

Minimum Operating Temperature: -65 °C

With a minimum operating temperature of -65 °C, this diode is ideal for applications in harsh cold environments, expanding its usability across diverse conditions.

Maximum Forward Voltage (VF): 0.38 V

A low maximum forward voltage of 0.38 V contributes to higher efficiency, resulting in less power loss and better performance in forward-bias conditions.

Maximum Repetitive Peak Reverse Voltage: 40 V

This diode's capacity to handle a repetitive peak reverse voltage of 40 V makes it suitable for applications subject to high transient voltages, ensuring reliability in varying operational scenarios.

Technical Specifications

Other Function Diodes BAS40-07/DG,215 attributes and parameters. Explore more Other Function Diodes devices from NXP Semiconductors

Specs

Maximum Forward Voltage (VF):

.38 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

40 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

BAS40-07/DG,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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