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BYT231PIV800

STMicroelectronics

BYT231PIV800 by STMicroelectronics

BYT231PIV800 by STMicroelectronics is a diode with 800V reverse test voltage, 0.055us max reverse recovery time, and 100uA max reverse current. It operates b/w -40 to 150 °C and has a VF of 1.9V. Ideal for applications requiring high voltage rectification in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,929 parts In-Stock

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Vyrian

USA . 3,088 parts In-Stock

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Anansix

USA . 2,223 parts In-Stock

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ECAB

Sweden . 4 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,738 parts In-Stock

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$0.174

100+ parts

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$0.156

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1,738

$0.174

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$0.156

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MKK Technologies

India . 588 parts In-Stock

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$0.327

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588

$0.327

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DigiPath Technology Company

USA . 588 parts In-Stock

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$0.327

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588

$0.327

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Corphita

USA . 4,782 parts In-Stock

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Northwest PG Solutions

USA . 816 parts In-Stock

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Parana Technologies

USA . 445 parts In-Stock

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$0.208

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445

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Native Components

USA . 165 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the BYT231PIV800 by STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers top-notch Other Function Diodes designed for a variety of applications. With a maximum reverse recovery time of 0.055 us and a maximum operating temperature of 150 °C, this diode offers superior performance and efficiency. Experience the value and benefits of the BYT231PIV800, including its high reverse test voltage of 800 V and low maximum reverse current of 100 uA. Upgrade your projects with this exceptional product today.

Feature Benefit Bullets

Maximum Reverse Recovery Time: 0.055 us

This diode has a fast reverse recovery time, making it suitable for high-speed applications where quick switching is required.

Maximum Reverse Current: 100 uA

The low reverse current ensures minimal power loss and high efficiency in the circuit.

Reverse Test Voltage: 800 V

The high reverse test voltage allows for reliable operation in high voltage applications.

Maximum Operating Temperature: 150 °C

With a wide operating temperature range, this diode can withstand higher temperatures without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the diode can function in a wide range of environments.

Maximum Forward Voltage (VF): 1.9 V

The low forward voltage drop helps reduce power dissipation and improve energy efficiency.

Maximum Repetitive Peak Reverse Voltage: 800 V

The high repetitive peak reverse voltage allows the diode to handle high voltage spikes and surges efficiently.

Technical Specifications

Other Function Diodes BYT231PIV800 attributes and parameters. Explore more Other Function Diodes devices from STMicroelectronics

Specs

Maximum Forward Voltage (VF):

1.9 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Repetitive Peak Reverse Voltage:

800 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.055 us

Reverse Test Voltage:

800 V

Sub-Category:

Other Diodes

Surface Mount:

NO

Trade Compliance

BYT231PIV800 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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