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BAW56S/T3

NXP Semiconductors

BAW56S/T3 by NXP Semiconductors

BAW56S/T3 by NXP Semiconductors is a surface mount diode ideal for high-frequency applications. It features a max reverse recovery time of 0.004 µs, operates b/w -65 °C to 150 °C, and supports up to 90 V peak reverse voltage. Perfect for signal processing and switching circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Anansix

USA . 2,545 parts In-Stock

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Digiode

USA . 2,445 parts In-Stock

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2,445

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Vyrian

USA . 128 parts In-Stock

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128

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Native Components

USA . 245 parts In-Stock

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$0.121

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$0.116

245

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Northwest PG Solutions

USA . 564 parts In-Stock

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$0.133

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$0.117

564

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$0.117

One Stop Electronics

USA . 1,236 parts In-Stock

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$2.010

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$2.010

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UNI Independent Distributors

Spain . 3,370 parts In-Stock

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Corphita

USA . 3,344 parts In-Stock

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Overview

Elevate your projects with the BAW56S/T3 from NXP Semiconductors, a trusted leader in innovation. This surface-mount diode offers unparalleled reliability and efficiency, perfect for diverse applications in consumer electronics, automotive systems, and telecommunications. Experience enhanced performance with minimal reverse recovery time, ensuring quicker response and durability. Choose NXP for quality that empowers your designs, delivering value and peace of mind you can count on!

Feature Benefit Bullets

Surface Mount: YES

The surface mount feature allows for easy integration into compact circuit designs, saving space and simplifying assembly.

Maximum Reverse Recovery Time: 0.004 us

A very fast reverse recovery time ensures high switching speeds, making this diode suitable for high-frequency applications.

Maximum Reverse Current: 150 uA

Low reverse current indicates minimal leakage, improving efficiency and reliability in the circuit.

Reverse Test Voltage: 80 V

High reverse test voltage rating ensures robust performance under reverse conditions, enhancing the diode's durability.

Maximum Operating Temperature: 150 °C

A high operating temperature limit makes this diode ideal for use in harsh environments where other components might fail.

Minimum Operating Temperature: -65 °C

Operational capability at low temperatures ensures reliability in extreme conditions, making it suitable for aerospace and military applications.

Maximum Power Dissipation: 0.35 W

Moderate power dissipation allows the diode to handle substantial power without overheating, ensuring long-term reliability.

Maximum Forward Voltage (VF): 0.715 V

A relatively low forward voltage drop increases circuit efficiency, resulting in less power loss during operation.

Maximum Repetitive Peak Reverse Voltage: 90 V

High peak reverse voltage makes this diode capable of handling significant voltage spikes, protecting the rest of the circuit.

Technical Specifications

Other Function Diodes BAW56S/T3 attributes and parameters. Explore more Other Function Diodes devices from NXP Semiconductors

Specs

Maximum Forward Voltage (VF):

.715 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Power Dissipation:

.35 W

Maximum Repetitive Peak Reverse Voltage:

90 V

Maximum Reverse Current:

150 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

80 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

BAW56S/T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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