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SA3229-E1

Onsemi

SA3229-E1 by Onsemi

SA3229-E1 by Onsemi is a CMOS microprocessor circuit with 25 terminals in a rectangular chip carrier package. It operates b/w 0-40 °C, suitable for commercial applications. With a nominal voltage of 1.25V, it's ideal for various uPs and uCs functions requiring surface mount technology.

Median Price

$2.870

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Flip Electronics

USA . 175 parts In-Stock

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Vyrian

USA . 7,520 parts In-Stock

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Digiode

USA . 885 parts In-Stock

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AZTECH Wire

Italy . 108 parts In-Stock

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$12.290

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Problanco Electronics

Mexico . 8,394 parts In-Stock

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SupplyDigital Components

Austria . 6,490 parts In-Stock

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Microchip USA

USA . 4,913 parts In-Stock

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Kulean Microsystems

USA . 4,563 parts In-Stock

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TANS Electronics

Latvia . 2,454 parts In-Stock

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Corphita

USA . 2,198 parts In-Stock

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UHIMA Technologies

Türkiye . 942 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Overview

Elevate your electronic designs with the SA3229-E1 from Onsemi, a leading manufacturer known for delivering high-quality products. This versatile chip carrier is perfect for a variety of applications in the Other Function uPs, uCs & Peripheral ICs category. With its innovative technology and reliable performance, customers can expect seamless integration and optimal functionality. Experience the value and benefits that the SA3229-E1 brings to your projects, enhancing efficiency and productivity like never before. Trust Onsemi to provide top-of-the-line solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the internal components of the product.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration onto circuit boards, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

The rectangular package shape is commonly used in electronic components, making it compatible with standard mounting methods and layouts.

No. of Terminals: 25

Having 25 terminals provides ample connectivity options for various input and output requirements in the application.

Package Style (Meter): CHIP CARRIER

The chip carrier style offers a compact and efficient design for the IC, suitable for applications where space is limited.

Maximum Operating Temperature: 40 °C

With a high maximum operating temperature of 40 °C, the product can operate reliably under varying environmental conditions.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures the product can function effectively even in colder environments.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy and secure connection to the circuit board, ensuring stable performance.

Maximum Seated Height: 1.781 mm

The low maximum seated height allows for a compact and slim profile, suitable for applications with space constraints.

Width: 3.18 mm

The narrow width of 3.18 mm enables the product to be integrated into tight spaces on the circuit board without compromising performance.

Length: 5.59 mm

The moderate length of 5.59 mm provides a balanced form factor for the product, allowing for easy placement on the circuit board.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable performance in standard operating conditions typically found in commercial applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

The use of a microprocessor circuit as the peripheral IC type enables advanced processing capabilities and versatility for diverse applications.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in operation.

Terminal Form: BUTT

The butt terminal form provides a secure and stable connection point for the product, ensuring reliable signal transmission and performance.

Nominal Supply Voltage: 1.25 V

The nominal supply voltage of 1.25 V is compatible with a wide range of power sources, making the product versatile and easy to integrate into different systems.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs SA3229-E1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Onsemi

Specs

JESD-30 Code:

R-PBCC-B25

Length:

5.59 mm

No. of Terminals:

25

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BCC

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.781 mm

Nominal Supply Voltage:

1.25 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.18 mm

Peripheral IC Type:

Trade Compliance

SA3229-E1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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