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SA3291A-E1

Onsemi

SA3291A-E1 by Onsemi

SA3291A-E1 by Onsemi is a CMOS microprocessor circuit with 32 terminals. Operating temp range: 0-40 °C, supply voltage: 1.25V. Ideal for commercial applications requiring compact surface-mount microelectronic assemblies.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,123 parts In-Stock

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Digiode

USA . 2,224 parts In-Stock

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AZTECH Wire

Italy . 437 parts In-Stock

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SupplyDigital Components

Austria . 4,785 parts In-Stock

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Problanco Electronics

Mexico . 4,309 parts In-Stock

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Vigor

Singapore . 3,693 parts In-Stock

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Kulean Microsystems

USA . 2,239 parts In-Stock

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TANS Electronics

Latvia . 1,629 parts In-Stock

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Corphita

USA . 1,169 parts In-Stock

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UHIMA Technologies

Türkiye . 952 parts In-Stock

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Corohmni

South Africa . 492 parts In-Stock

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Microchip USA

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Overview

Elevate your electronic projects with the SA3291A-E1 by Onsemi, a high-quality Other Function uPs, uCs & Peripheral ICs that delivers unmatched performance and reliability. With a surface mount design and 32 terminals, this product offers endless possibilities for applications in various industries. Experience the value of Onsemi's superior manufacturing standards and technology in every use, from microprocessor circuits to commercial-grade temperature environments. Upgrade your projects today with the SA3291A-E1 and unlock a new level of efficiency and innovation.

Feature Benefit Bullets

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient space utilization on the PCB.

No. of Terminals: 32

Provides sufficient connectivity options for various components and peripherals.

Maximum Operating Temperature: 40 °C

Can operate efficiently at higher temperatures, suitable for industrial applications.

Width: 3.68 mm

Compact size saves space on the PCB and allows for denser component placement.

Nominal Supply Voltage: 1.25 V

Low voltage requirement reduces power consumption and heat generation.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs SA3291A-E1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Onsemi

Specs

Additional Features:

SEATED HGT-NOM

JESD-30 Code:

R-XXMA-N32

Length:

6.35 mm

No. of Terminals:

32

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROELECTRONIC ASSEMBLY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.777 mm

Nominal Supply Voltage:

1.25 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

UNSPECIFIED

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.68 mm

Peripheral IC Type:

Trade Compliance

SA3291A-E1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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