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NVTFS4C10NWFTAG

Onsemi

NVTFS4C10NWFTAG by Onsemi

NVTFS4C10NWFTAG by Onsemi is a N-CHANNEL FET with 47A max drain current and 28W power dissipation. Ideal for power applications, it operates at up to 175°C with surface mount configuration.

Median Price

$1.440

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,899 parts In-Stock

1+ parts

$0.679

100+ parts

$0.617

1k+ parts

$0.595

10k+ parts

-

2,899

$0.679

$0.617

$0.595

-

DigiKey

USA . 998 parts In-Stock

1+ parts

$2.200

100+ parts

$0.950

1k+ parts

$0.755

10k+ parts

-

998

$2.200

$0.950

$0.755

-

Mouser Electronics

USA . 429 parts In-Stock

1+ parts

$2.200

100+ parts

$0.910

1k+ parts

$0.631

10k+ parts

-

429

$2.200

$0.910

$0.631

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Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

-

-

-

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Verical

USA . 2,899 parts In-Stock

1+ parts

-

100+ parts

$0.617

1k+ parts

$0.595

10k+ parts

-

2,899

-

$0.617

$0.595

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.820

100+ parts

-

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-

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700

$0.820

-

-

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Digiode

USA . 2,272 parts In-Stock

1+ parts

$1.378

100+ parts

-

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-

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2,272

$1.378

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-

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Chip Stock

USA . 24,000 parts In-Stock

1+ parts

-

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24,000

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Flip Electronics

USA . 3,000 parts In-Stock

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-

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3,000

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-

-

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Vyrian

USA . 1,593 parts In-Stock

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-

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1,593

-

-

-

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Distributors (Availability)

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Continental Prestige Electronics

USA . 3,788 parts In-Stock

1+ parts

$0.786

100+ parts

-

1k+ parts

-

10k+ parts

$0.770

3,788

$0.786

-

-

$0.770

Argo Parts USA

USA . 3,483 parts In-Stock

1+ parts

$0.786

100+ parts

-

1k+ parts

-

10k+ parts

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3,483

$0.786

-

-

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Corohmni

South Africa . 250 parts In-Stock

1+ parts

$0.803

100+ parts

-

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-

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250

$0.803

-

-

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.819

100+ parts

$0.819

1k+ parts

$0.819

10k+ parts

-

2,000

$0.819

$0.819

$0.819

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.820

100+ parts

-

1k+ parts

$0.779

10k+ parts

$0.762

1,000

$0.820

-

$0.779

$0.762

Aztec Data Supply Inc.

USA . 3,845 parts In-Stock

1+ parts

$0.830

100+ parts

-

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-

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3,845

$0.830

-

-

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Semicontronic

India . 1,440 parts In-Stock

1+ parts

$1.230

100+ parts

$1.199

1k+ parts

$1.193

10k+ parts

-

1,440

$1.230

$1.199

$1.193

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Ampacity Inc.

Singapore . 1,418 parts In-Stock

1+ parts

$1.230

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-

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1,418

$1.230

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Corphita

USA . 534 parts In-Stock

1+ parts

$1.305

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-

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534

$1.305

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Microchip USA

USA . 4,335 parts In-Stock

1+ parts

$4.506

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4,335

$4.506

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RC Electronics

USA . 94,533 parts In-Stock

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94,533

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Lixinc

USA . 9,800 parts In-Stock

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9,800

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Kulean Microsystems

USA . 8,293 parts In-Stock

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Perfect Parts

USA . 7,896 parts In-Stock

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7,896

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Problanco Electronics

Mexico . 2,294 parts In-Stock

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2,294

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TANS Electronics

Latvia . 813 parts In-Stock

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813

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UHIMA Technologies

Türkiye . 778 parts In-Stock

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778

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SupplyDigital Components

Austria . 417 parts In-Stock

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417

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Overview

Unleash the power of innovation with the NVTFS4C10NWFTAG by Onsemi. As a leader in Power Field Effect Transistors (FET) technology, Onsemi delivers top-notch quality and reliability. This N-CHANNEL transistor offers a single configuration, making it versatile for a wide range of applications. With a maximum drain current of 47 A and a power dissipation of 28 W, this FET is designed to perform under pressure. Trust Onsemi to provide cutting-edge technology that exceeds expectations. Elevate your projects with the NVTFS4C10NWFTAG and experience the difference in performance and efficiency.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs have lower ON-resistance and higher current-carrying capability compared to P-CHANNEL FETs, making them suitable for high-power applications.

Configuration: SINGLE

SINGLE configuration FETs are easier to implement and control in circuits, making them a good choice for simpler designs.

Surface Mount: YES

Surface mount FETs are space-saving, provide better thermal performance, and are more suitable for automated assembly processes.

Maximum Drain Current (Abs) (ID): 47 A

With a high maximum drain current rating, this FET can handle high power loads without being damaged.

Maximum Power Dissipation (Abs): 28 W

With a high maximum power dissipation rating, this FET can operate at high power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor FETs offer high input impedance, low output capacitance, and low ON-resistance, making them efficient for switching applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures without performance degradation.

Terminal Finish: Matte Tin (Sn) - annealed

Matte Tin finish provides good solderability and reliability, while the annealed process ensures a stable and durable connection.

Maximum Time At Peak Reflow Temperature (s): 30

The FET can withstand exposure to peak reflow temperature for up to 30 seconds, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature rating, this FET can withstand the heat involved in reflow soldering without getting damaged.

Technical Specifications

Power Field Effect Transistors (FET) NVTFS4C10NWFTAG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

47 A

Maximum Drain Current (ID):

47 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

175 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NVTFS4C10NWFTAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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