Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTD5804NG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 125A IDM, and 0.0085 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and 195mJ EAS. With a max power dissipation of 71W and operating temperature of 175 °C, this N-CHANNEL transistor in PLASTIC/EPOXY package is suitable for high-power switching circuits.
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The plastic/epoxy material used in the package body provides durability and protection, making the product reliable in various operating conditions.
N-channel FETs typically have better performance characteristics and lower on-state resistance than P-channel FETs, making this product suitable for high-performance applications.
The built-in diode enhances the product's efficiency and eliminates the need for additional components, simplifying the design and reducing overall costs.
Designed for switching applications, this FET offers fast switching speeds and high efficiency, making it ideal for power management in a variety of electronic devices.
With a high maximum operating temperature of 175 °C, this FET can withstand elevated temperatures without performance degradation, ensuring reliability in demanding environments.
Power Field Effect Transistors (FET) NTD5804NG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
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NTD5804NG Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BAV99
Motorola
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; JESD-609 Code: e0;
2N2222A
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
BSS84PH6327XTSA2
Infineon Technologies
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
LM358MX
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148WT
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
SS14
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Eic Semiconductor
Hy Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
Fairchild Semiconductor
Changzhou Starsea Electronics
1N4148WS
Surge Components
MBR0520LT1
MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.
SMBJ18CA
Sangdest Microelectronics (Nanjing)
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Sensitron Semiconductor
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
STM32H743XIH6
STMicroelectronics
STM32H743XIH6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 36-Ch 16-Bit ADC, and 2-Ch 12-Bit DAC. It operates at up to 48 MHz, has 1085440 bytes of RAM, and offers connectivity options like CAN, I2C, USB. Ideal for industrial applications requiring high-performance processing and extensive peripheral support.
IRLML9303TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
BSC070N10NS3GATMA1
Infineon's BSC070N10NS3GATMA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.007 ohm RDS(on), and 360A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with DUAL terminals and built-in diode ensures reliable performance in various systems.
IPZ40N04S5L7R4ATMA1
Infineon's IPZ40N04S5L7R4ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0107 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRF5210PBF
IRF5210PBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage and 140A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W and operates in ENHANCEMENT MODE. With a Drain Current of 40A and 0.06 ohm On Resistance, it offers reliable performance in various electronic systems.
IRF7103TRPBF-1
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
FDD6637
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
2N7002BKMB,315
NXP Semiconductors
2N7002BKMB,315 by NXP Semiconductors is a single N-channel power FET with an operating mode of enhancement. It has a max drain current of 0.45A and a max power dissipation of 0.715W. This MOSFET is suitable for applications requiring high efficiency and temperature resistance up to 150°C.
FQD12N20LTM-F085
FQD12N20LTM-F085 by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 9A, Max Pulsed Drain Current of 36A, and Max Power Dissipation of 55W. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and has a fast turn on/off time for efficient performance.
IRFP460BPBF
Vishay Intertechnology
Vishay Intertechnology's IRFP460BPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 62A IDM and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with an EAS of 281mJ, making it suitable for high-power tasks.
FDD4685
FDD4685 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for applications requiring high power dissipation up to 69W. Featuring a max Drain Current of 40A and an Avalanche Energy Rating of 121mJ, it operates in Enhancement Mode for efficient performance in various electronic circuits.
IRFB4227PBF
IRFB4227PBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM and 0.024 ohm RDS(on), operating in ENHANCEMENT MODE. With a max power dissipation of 330W, it is suitable for high-power electronic systems.
IRFP450PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 760 mJ;
IRF7493TRPBF-1
IRFP460LC
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 225;
ZXMP6A17E6TA
Diodes Incorporated
ZXMP6A17E6TA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 13.6A IDM, 3A ID, and 0.125 ohm RDS(ON). With a max power dissipation of 1.92W and operating temperature up to 150°C, it's suitable for various electronic designs.
FDS8984
FDS8984 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 32mJ Avalanche Energy Rating. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS and BUILT-IN DIODE. This small outline transistor has a max operating temperature of 150°C and can handle up to 30A pulsed drain current.
IPA80R1K0CEXKSA2
Infineon's IPA80R1K0CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 18A IDM, 230mJ EAS, and 0.95 ohm RDS(on). Package style: FLANGE MOUNT, technology: MOSFET, element material: Si.
IRF640
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 122 ns; Transistor Element Material: SILICON;
JANTX2N6796U
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 100 V;
BS170
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
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NTD5865NLT4G
NTD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 137A IDM, and 0.019 ohm RDS. It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 52W and can withstand temperatures from -55 to 150 °C.
NTD5867NLT4G
NTD5867NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.
NTD5862NT4G
NTD5862NT4G by Onsemi is an N-CHANNEL Power FET with a 60V DS Breakdown Voltage and 335A IDM. Ideal for applications requiring high power dissipation up to 115W, such as in power management systems or motor control circuits. Its small outline package and low on-resistance of 0.0057 ohm make it suitable for compact designs needing efficient power handling.
NTD5865NL-1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 52 W; Minimum DS Breakdown Voltage: 60 V; Minimum Operating Temperature: -55 Cel;
NTD5867NL-1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 36 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: SINGLE;
NTD5803NT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (Abs) (ID): 76 A; Peak Reflow Temperature (C): 260;
NTD5406NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 450 mJ;
NTD5804NT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 71 W; Terminal Form: GULL WING; JESD-609 Code: e3;
NTD5805NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Avalanche Energy Rating (EAS): 80 mJ; No. of Elements: 1;
NTD50N03R-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: DRAIN; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 25 V;
NTD50N03R-35G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 20 mJ; No. of Terminals: 3;
NTD5407NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Case Connection: DRAIN; Terminal Finish: TIN;
NTD5803NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Avalanche Energy Rating (EAS): 240 mJ; JESD-30 Code: R-PSIP-T3;
NTD50N03RT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 25 V; JESD-609 Code: e3;
NTD50N03R-35
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 25 V; Case Connection: DRAIN; Transistor Application: SWITCHING;
NTD5407NT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Case Connection: DRAIN; Maximum Feedback Capacitance (Crss): 80 pF;
NTD50N03RG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 20 mJ; Maximum Drain-Source On Resistance: .014 ohm; Operating Mode: ENHANCEMENT MODE;
NTD5413NT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Maximum Drain-Source On Resistance: .026 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTD5414NT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .037 ohm;
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