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NRVTS8120EMFST1G

Onsemi

NRVTS8120EMFST1G by Onsemi

NRVTS8120EMFST1G by Onsemi is a Schottky rectifier diode with 120V reverse voltage, 8A output current, and 0.88V forward voltage. It operates b/w -55 to 175 °C, ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,579 parts In-Stock

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Digiode

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Bristol Electronics

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$0.126

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Microchip USA

USA . 2,742 parts In-Stock

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AZTECH Wire

Italy . 1,047 parts In-Stock

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iodParts Technologies Inc.

India . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 7,168 parts In-Stock

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TANS Electronics

Latvia . 7,056 parts In-Stock

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Kulean Microsystems

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Perfect Parts

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SupplyDigital Components

Austria . 6,498 parts In-Stock

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Corphita

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 738 parts In-Stock

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Corohmni

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Overview

Experience the superior quality and reliability of Onsemi with the NRVTS8120EMFST1G diode. Designed for efficiency, this Schottky rectifier diode offers a maximum output current of 8A and a maximum forward voltage of 0.88V, making it perfect for a variety of applications. With a wide operating temperature range and AEC-Q101 reference standard compliance, this diode provides unmatched performance and peace of mind. Trust Onsemi for all your diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the diode, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Reverse Current: 50 uA

Ensures minimal leakage current when the diode is in the reverse-biased state, improving overall efficiency.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without degradation, making it suitable for a wide range of applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds compared to standard silicon diodes, leading to improved performance.

Technical Specifications

Diodes & Rectifiers NRVTS8120EMFST1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.88 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

50 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS8120EMFST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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