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NRVTS660MFDT3G

Onsemi

NRVTS660MFDT3G by Onsemi

NRVTS660MFDT3G by Onsemi is a Schottky rectifier diode with 60V peak reverse voltage and 3A output current. It operates b/w -55 °C to 175°C, making it suitable for automotive applications meeting AEC-Q101 standards. With a max forward voltage of 0.75V and low reverse current of 55uA, it is ideal for high-efficiency power supply designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 6,319 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 686 parts In-Stock

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SupplyDigital Components

Austria . 8,394 parts In-Stock

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TANS Electronics

Latvia . 5,856 parts In-Stock

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Kulean Microsystems

USA . 5,337 parts In-Stock

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Problanco Electronics

Mexico . 4,181 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 790 parts In-Stock

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Corohmni

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Overview

Discover the cutting-edge NRVTS660MFDT3G by Onsemi, a premium diode & rectifier that guarantees top-notch quality and performance. Manufactured by Onsemi, known for their superior products, this diode offers unparalleled reliability and efficiency. Ideal for a wide range of applications, this product is a game-changer in the industry. With its innovative technology and high output current, customers can trust in its durability and longevity. Experience the value and benefits of the NRVTS660MFDT3G, where quality meets functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode and rectifier elements, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation and integration into circuit boards, saving time and effort during assembly.

Maximum Reverse Current: 55 uA

Low reverse current minimizes power loss and improves efficiency of the diode and rectifier.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for use in various environments and conditions.

Diode Type: RECTIFIER DIODE

Specifically designed for rectifying alternating current (AC) to direct current (DC) with high efficiency.

Maximum Forward Voltage (VF): 0.75 V

Low forward voltage drop ensures minimal power loss and efficient operation of the diode.

Maximum Output Current: 3 A

Capable of handling high output currents, making it suitable for applications requiring significant power.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds compared to standard silicon diodes, improving efficiency.

Technical Specifications

Diodes & Rectifiers NRVTS660MFDT3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.75 V

JESD-30 Code:

R-PDSO-F6

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

55 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVTS660MFDT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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