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NRVTS5100ETFSWFTWG

Onsemi

NRVTS5100ETFSWFTWG by Onsemi

NRVTS5100ETFSWFTWG by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 5A output current, and 1V forward voltage. It is designed for efficiency applications with an operating temperature range of -65 to 175 °C. The diode has a small outline package style and matte tin terminal finish for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,993 parts In-Stock

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8,993

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Digiode

USA . 2,432 parts In-Stock

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2,432

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Distributors (Availability)

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Ampacity Inc.

Singapore . 719 parts In-Stock

1+ parts

$2.010

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719

$2.010

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AZTECH Wire

Italy . 1,144 parts In-Stock

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$15.640

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1,144

$15.640

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QUARKTWIN TECHNOLOGY LTD

USA . 13,643 parts In-Stock

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13,643

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Problanco Electronics

Mexico . 6,824 parts In-Stock

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6,824

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Kulean Microsystems

USA . 5,600 parts In-Stock

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5,600

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SupplyDigital Components

Austria . 5,241 parts In-Stock

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Microchip USA

USA . 1,699 parts In-Stock

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TANS Electronics

Latvia . 1,506 parts In-Stock

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UHIMA Technologies

Türkiye . 696 parts In-Stock

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696

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Corphita

USA . 384 parts In-Stock

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384

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Corohmni

South Africa . 314 parts In-Stock

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Overview

Unleash the power of efficiency with the NRVTS5100ETFSWFTWG by Onsemi. As a leading manufacturer in the industry, Onsemi provides top-quality diodes and rectifiers that guarantee reliability and performance. Ideal for various applications, this product offers customers unmatched value with its high output current, low forward voltage, and excellent temperature range. Say goodbye to inefficiency and hello to superior performance with the NRVTS5100ETFSWFTWG by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diode, making it suitable for various environments.

Config: SINGLE

Single configuration simplifies installation and connection, making it easier to use in different circuit setups.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and facilitating production processes.

Maximum Reverse Current: 50 uA

Low maximum reverse current helps minimize power loss and ensures efficient operation of the diode.

Package Shape: SQUARE

Square package shape provides stability and ease of handling during installation, preventing misalignment or damage.

No. of Terminals: 5

Having 5 terminals enables versatile connectivity options and compatibility with various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact design layouts in electronic devices.

Application: EFFICIENCY

Designed for efficiency, this diode is suitable for applications where energy savings and performance optimization are key.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for reliable performance in demanding environments and applications.

Minimum Operating Temperature: -65 °C

Wide minimum operating temperature range ensures functionality even in extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish provides good solderability and electrical conductivity, contributing to a reliable connection.

Terminal Position: DUAL

Dual terminal position allows for flexible installation and wiring options, enhancing compatibility with different circuit layouts.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and helps prevent reverse bias issues, ensuring proper diode functionality.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance facilitates efficient soldering processes during assembly, ensuring robust connections.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality for automotive electronic applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC, making it ideal for power supply and rectification circuits.

Maximum Forward Voltage (VF): 1 V

Low maximum forward voltage drop helps minimize power loss and improve efficiency in circuit operations.

Maximum Output Current: 5 A

High maximum output current capability allows for handling higher power loads, making it suitable for various applications.

Technology: SCHOTTKY

Schottky technology provides fast switching speed and low forward voltage drop, enhancing performance in high-frequency circuits.

Terminal Form: FLAT

Flat terminal form ensures secure and stable connections, facilitating reliable performance in different circuit setups.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage tolerance offers protection against reverse voltage spikes and fluctuations in the circuit.

Maximum Non Repetitive Peak Forward Current: 80 A

High maximum non-repetitive peak forward current capability allows for handling sudden current surges without damage to the diode.

Diode Element Material: SILICON

Silicon diode element material provides good electrical properties and reliability, ensuring stable performance in various operating conditions.

Technical Specifications

Diodes & Rectifiers NRVTS5100ETFSWFTWG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

S-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

50 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVTS5100ETFSWFTWG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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