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NRVTS5100ETFSWFTAG

Onsemi

NRVTS5100ETFSWFTAG by Onsemi

NRVTS5100ETFSWFTAG by Onsemi is a Schottky rectifier diode with 100V peak reverse voltage and 5A output current. It operates b/w -65°C to 175°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminals for surface mount assembly.

Median Price

$0.174

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 102 parts In-Stock

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$0.131

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$0.120

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RS (Exports)

UK . 1,180 parts In-Stock

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$0.292

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$0.202

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$0.202

Chip1Stop

Japan . 362 parts In-Stock

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$0.227

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$0.175

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Verical

USA . 102 parts In-Stock

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$0.120

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Mouser Electronics

USA . 35 parts In-Stock

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Digiode

USA . 515 parts In-Stock

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$0.290

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Flip Electronics

USA . 27,000 parts In-Stock

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Chip Stock

USA . 16,000 parts In-Stock

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Vyrian

USA . 12,788 parts In-Stock

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Corohmni

South Africa . 341 parts In-Stock

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$0.171

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Corphita

USA . 2,367 parts In-Stock

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$0.274

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Continental Prestige Electronics

USA . 1,490 parts In-Stock

1+ parts

$0.574

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$0.320

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$0.186

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$0.174

1,490

$0.574

$0.320

$0.186

$0.174

Microchip USA

USA . 1,263 parts In-Stock

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$1.440

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$1.430

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$1.430

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$1.420

1,263

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$1.430

$1.430

$1.420

QUARKTWIN TECHNOLOGY LTD

USA . 16,600 parts In-Stock

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Kulean Microsystems

USA . 7,740 parts In-Stock

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SupplyDigital Components

Austria . 6,985 parts In-Stock

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Lixinc

USA . 6,274 parts In-Stock

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Problanco Electronics

Mexico . 5,710 parts In-Stock

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TANS Electronics

Latvia . 4,283 parts In-Stock

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UHIMA Technologies

Türkiye . 943 parts In-Stock

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Overview

Unlock the power of efficiency with the NRVTS5100ETFSWFTAG by Onsemi. Crafted with precision and reliability in mind, this rectifier diode offers seamless operation in a variety of applications. With a maximum output current of 5A and a maximum repetitive peak reverse voltage of 100V, this small outline package delivers high performance while maintaining a low profile. Trust Onsemi's expertise in diodes and rectifiers to add value to your projects and enhance overall productivity. Elevate your designs with the NRVTS5100ETFSWFTAG and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, ensuring long-term reliability.

Config: SINGLE

Single configuration allows for easy integration into a variety of circuits and systems.

Surface Mount: YES

Surface mount capability enables efficient assembly and space-saving design.

Maximum Reverse Current: 50 uA

Low reverse current helps reduce power loss and improve efficiency in the circuit.

Package Shape: SQUARE

Square package shape provides a compact footprint, ideal for applications with limited space.

No. of Terminals: 5

Having 5 terminals allows for versatile connectivity and options in circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes it suitable for applications where space is a constraint.

Application: EFFICIENCY

Designed for efficiency-focused applications, ensuring optimal performance in power management.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows for reliable operation in various environments.

Minimum Operating Temperature: -65 °C

Wide minimum operating temperature range ensures functionality even in extreme cold conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides corrosion resistance and facilitates soldering during assembly.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and configurations.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and improves ease of use.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures stable performance during soldering process.

Reference Standard: AEC-Q101

Conformance to AEC-Q101 standard ensures high quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for rectifying AC to DC current efficiently.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop helps minimize power loss and improve overall efficiency.

Maximum Output Current: 5 A

High output current capacity makes it suitable for applications requiring moderate to high current levels.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage, improving performance efficiency.

Terminal Form: FLAT

Flat terminal form ensures secure and stable connection in the circuit.

Maximum Repetitive Peak Reverse Voltage: 100 V

High repetitive peak reverse voltage rating provides protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 80 A

High non-repetitive peak forward current capability allows for reliable operation during transient conditions.

Diode Element Material: SILICON

Silicon diode element material offers good performance characteristics and durability.

Technical Specifications

Diodes & Rectifiers NRVTS5100ETFSWFTAG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

S-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

50 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVTS5100ETFSWFTAG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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