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NRVTS5100ETFSTWG

Onsemi

NRVTS5100ETFSTWG by Onsemi

NRVTS5100ETFSTWG by Onsemi is a Schottky rectifier diode with 100V reverse voltage and 5A output current. It operates b/w -65 °C to 175°C, making it suitable for high-efficiency applications. With a peak forward current of 80A, this diode offers reliable performance in various electronic circuits.

Median Price

$0.214

Lifecycle Status

EOL

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 5,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.205

5,000

-

-

-

$0.205

Rochester

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$0.222

1k+ parts

$0.184

10k+ parts

$0.164

5,000

-

$0.222

$0.184

$0.164

Distributors (In-Stock)

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Martec Srl

Italy . 100,000 parts In-Stock

1+ parts

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100,000

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Chip Stock

USA . 50,000 parts In-Stock

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Flip Electronics

USA . 20,000 parts In-Stock

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20,000

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Vyrian

USA . 8,022 parts In-Stock

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8,022

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Digiode

USA . 456 parts In-Stock

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456

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Distributors (Availability)

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.157

100+ parts

$0.143

1k+ parts

$0.129

10k+ parts

-

200

$0.157

$0.143

$0.129

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Corohmni

South Africa . 86 parts In-Stock

1+ parts

$0.191

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86

$0.191

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AZTECH Wire

Italy . 667 parts In-Stock

1+ parts

$21.800

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667

$21.800

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Component Stockers USA

USA . 150,215 parts In-Stock

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Kulean Microsystems

USA . 5,096 parts In-Stock

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Problanco Electronics

Mexico . 3,220 parts In-Stock

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TANS Electronics

Latvia . 2,635 parts In-Stock

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2,635

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SupplyDigital Components

Austria . 1,813 parts In-Stock

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1,813

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iodParts Technologies Inc.

India . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 551 parts In-Stock

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551

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Corphita

USA . 253 parts In-Stock

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Overview

Discover the NRVTS5100ETFSTWG by Onsemi, a top-quality rectifier diode designed for efficiency in various applications. With a maximum output current of 5A and a maximum repetitive peak reverse voltage of 100V, this product offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is built to last with a package body material of plastic/epoxy and a terminal finish of matte tin. Whether you're looking to enhance power supply efficiency or improve circuit performance, the NRVTS5100ETFSTWG delivers value, benefits, and advantages that will exceed your expectations. Upgrade your projects today with this cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various environments.

Config: SINGLE

The single configuration simplifies the design and installation process, making it a convenient choice for users.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on a PCB, enhancing the overall efficiency of the product.

Maximum Reverse Current: 50 uA

The low reverse current ensures minimal power loss and improved efficiency in the circuit.

Package Shape: SQUARE

The square shape offers a compact design, saving space and allowing for easy integration into various applications.

No. of Terminals: 5

With 5 terminals, this diode provides versatile connectivity options for different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic devices.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where power saving and performance are key priorities.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures and harsh environmental conditions.

Minimum Operating Temperature: -65 °C

The wide operating temperature range allows this diode to be used in both hot and cold environments without performance degradation.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and conductivity for secure and reliable connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and installation, accommodating various connection requirements.

Case Connection: CATHODE

The cathode case connection simplifies the circuit design and ensures proper polarity for the diode.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for safe and efficient soldering during the manufacturing process.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making this diode suitable for automotive applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed to efficiently convert AC to DC power, making it essential for various electronic devices.

Maximum Forward Voltage (VF): 1 V

With a low forward voltage, this diode minimizes power loss and heat dissipation, enhancing energy efficiency.

Maximum Output Current: 5 A

Capable of handling high output currents, this diode is suitable for power supply and high-power applications.

Technology: SCHOTTKY

Featuring Schottky technology, this diode offers fast switching speeds and low forward voltage drop, improving overall performance.

Terminal Form: FLAT

The flat terminal form provides a stable and secure connection, ensuring reliable performance in various operating conditions.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high repetitive peak reverse voltage rating makes this diode suitable for high voltage applications, ensuring long-term reliability.

Maximum Non Repetitive Peak Forward Current: 80 A

Capable of handling high peak forward currents, this diode is ideal for applications that require transient surge protection.

Diode Element Material: SILICON

Made from silicon, a widely-used semiconductor material, this diode offers reliable performance and durability for various electronic applications.

Technical Specifications

Diodes & Rectifiers NRVTS5100ETFSTWG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

S-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

80 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

50 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NRVTS5100ETFSTWG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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