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NRVTS12100MFST3G

Onsemi

NRVTS12100MFST3G by Onsemi

NRVTS12100MFST3G by Onsemi is a Schottky rectifier diode with 100V max repetitive peak reverse voltage and 12A max output current. It operates b/w -55 to 150 °C, ideal for efficiency applications. This single-configured diode has a max forward voltage of 0.71V and surface mount package style.

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AZTECH Wire

Italy . 613 parts In-Stock

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Component Stockers USA

USA . 213 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,531 parts In-Stock

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SupplyDigital Components

Austria . 7,034 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 5,625 parts In-Stock

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Problanco Electronics

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Corphita

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Corohmni

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UHIMA Technologies

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Overview

Unlock the power of efficiency with the Onsemi NRVTS12100MFST3G diode rectifier. Manufactured by industry leader Onsemi, this product boasts high quality and reliability. Ideal for a wide range of applications, this diode offers customers unparalleled value and benefits. Say goodbye to inefficiency and hello to optimized performance with the NRVTS12100MFST3G by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection of the diode, making it suitable for various applications.

Config: SINGLE

Single configuration simplifies circuit design and installation process.

Surface Mount: YES

Surface mount feature enables easy and efficient integration onto circuit boards.

Maximum Reverse Current: 95 uA

Low maximum reverse current ensures efficient performance and minimal power loss.

Package Shape: RECTANGULAR

Rectangular package shape allows for compact and space-saving installation.

No. of Terminals: 5

Having 5 terminals provides flexibility in circuit connections and applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and facilitates easy mounting.

Application: EFFICIENCY

Designed for efficiency-focused applications, ensuring optimal performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for reliable operation in various environments.

Minimum Operating Temperature: -55 °C

Wide minimum operating temperature range enables usage in extreme conditions.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and reliability in connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connections.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and installation process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures secure soldering during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality of the product.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC current.

Maximum Forward Voltage (VF): 0.71 V

Low forward voltage drop ensures minimal power dissipation and energy efficiency.

Maximum Output Current: 12 A

High output current capacity enables handling of large loads and high-power applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop for improved efficiency.

Terminal Form: FLAT

Flat terminal form ensures secure and stable connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage rating provides protection against reverse voltage spikes.

Maximum Non Repetitive Peak Forward Current: 200 A

High maximum non-repetitive peak forward current capability allows for handling of surge currents.

Diode Element Material: SILICON

Silicon diode element material offers reliability, efficiency, and durability in various applications.

Technical Specifications

Diodes & Rectifiers NRVTS12100MFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

12 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

95 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS12100MFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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