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NRTSV20H100CTG

Onsemi

NRTSV20H100CTG by Onsemi

NRTSV20H100CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 100V. It operates b/w -55 to 150 °C, has a forward voltage of 0.78V, and can handle up to 10A output current. Ideal for efficiency applications due to its low forward voltage drop.

Median Price

$0.990

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 950 parts In-Stock

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Vyrian

USA . 5,810 parts In-Stock

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Corohmni

South Africa . 62 parts In-Stock

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Component Stockers USA

USA . 229 parts In-Stock

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Problanco Electronics

Mexico . 3,812 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 891 parts In-Stock

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UHIMA Technologies

Türkiye . 727 parts In-Stock

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Kulean Microsystems

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Overview

Unlock the power of efficiency with the NRTSV20H100CTG by Onsemi. Crafted with precision and reliability, this diode rectifier boasts top-notch quality that sets it apart from the competition. Perfect for a wide range of applications, this product offers customers unparalleled value and benefits. Say goodbye to inefficiencies and hello to seamless performance with the NRTSV20H100CTG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy package material offers good protection and durability for the diodes, ensuring a longer lifespan.

Maximum Reverse Current: 42 uA

Low reverse current ensures minimal power loss and efficient operation of the diodes.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable performance in various environmental conditions.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for rectifying alternating current, making them a suitable choice for efficiency applications.

Maximum Forward Voltage (VF): 0.78 V

Low forward voltage drop indicates less power dissipation and higher efficiency.

Maximum Output Current: 10 A

High output current rating allows for handling of large current loads with ease.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds, making them ideal for efficiency applications.

Technical Specifications

Diodes & Rectifiers NRTSV20H100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.78 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

125 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

42 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Trade Compliance

NRTSV20H100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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