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NLX1G11CMX1TCG

Onsemi

NLX1G11CMX1TCG by Onsemi

NLX1G11CMX1TCG by Onsemi is a CMOS Logic Gate with 3 inputs, 19ns propagation delay, and operates b/w -55 to 125 °C. It is used in military-grade applications requiring a supply voltage range of 1.65V to 5.5V for signal processing and control systems.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 33,000 parts In-Stock

1+ parts

-

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$0.132

1k+ parts

$0.110

10k+ parts

$0.098

33,000

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$0.132

$0.110

$0.098

DigiKey

USA . 33,000 parts In-Stock

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-

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$0.170

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$0.170

Verical

USA . 33,000 parts In-Stock

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$0.122

33,000

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$0.122

Distributors (In-Stock)

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Vyrian

USA . 1,323 parts In-Stock

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$0.094

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1,323

$0.094

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Digiode

USA . 1,203 parts In-Stock

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$0.103

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$0.103

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J2 Sourcing AB

Sweden . 36,000 parts In-Stock

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36,000

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Distributors (Availability)

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Corohmni

South Africa . 342 parts In-Stock

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$0.094

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342

$0.094

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Corphita

USA . 1,476 parts In-Stock

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$0.097

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1,476

$0.097

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Vigor

Singapore . 233 parts In-Stock

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$0.100

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233

$0.100

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Continental Prestige Electronics

USA . 30,000 parts In-Stock

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$0.094

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 5,787 parts In-Stock

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Kulean Microsystems

USA . 3,916 parts In-Stock

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SupplyDigital Components

Austria . 3,625 parts In-Stock

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Kepictronics

USA . 1,000 parts In-Stock

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TANS Electronics

Latvia . 877 parts In-Stock

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UHIMA Technologies

Türkiye . 750 parts In-Stock

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750

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Microchip USA

USA . 138 parts In-Stock

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Overview

Enhance your electronic projects with the NLX1G11CMX1TCG by Onsemi, a high-quality Logic Gates component that guarantees reliability and superior performance. Manufactured by the trusted brand Onsemi, this product ensures top-notch quality and precision. With its versatile applications in various electronic circuits, this Logic Gates component offers customers exceptional value and benefits. Experience seamless integration, enhanced efficiency, and improved functionality with the NLX1G11CMX1TCG - the perfect choice for all your electronic design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, suitable for various applications.

Surface Mount: YES

Surface mount design allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

No. of Inputs: 3

Having 3 inputs provides flexibility in logic operations, allowing for more complex circuit designs.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this logic gate compatible with standard electronic systems.

Propagation Delay (tpd): 19 ns

With a low propagation delay of 19 ns, this logic gate offers quick response times for time-sensitive applications.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making this logic gate energy-efficient and reliable.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures up to 125 °C, suitable for harsh industrial environments.

Minimum Operating Temperature: -55 °C

Can function in low temperatures as low as -55 °C, making it versatile for both hot and cold operating conditions.

Technical Specifications

Logic Gates NLX1G11CMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Length:

1 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Propagation Delay (tpd):

19 ns

Qualification:

Not Qualified

Maximum Seated Height:

.4 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX1G11CMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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