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NLX1G11CMUTCG

Onsemi

NLX1G11CMUTCG by Onsemi

NLX1G11CMUTCG by Onsemi is a CMOS Logic Gate with 3 inputs, 19ns propagation delay at 5V. Suitable for military applications, it operates b/w -55 to 125 °C and has a load capacitance of 15pF. With a small outline package style, it features dual terminal position and nickel gold palladium finish.

Median Price

$0.126

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 48,000 parts In-Stock

1+ parts

-

100+ parts

$0.131

1k+ parts

$0.109

10k+ parts

$0.097

48,000

-

$0.131

$0.109

$0.097

DigiKey

USA . 48,000 parts In-Stock

1+ parts

-

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$0.160

48,000

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$0.160

Verical

USA . 48,000 parts In-Stock

1+ parts

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$0.121

48,000

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$0.121

Mouser Electronics

USA . 3,957 parts In-Stock

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$0.103

3,957

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$0.103

Distributors (In-Stock)

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Digiode

USA . 2,385 parts In-Stock

1+ parts

$0.093

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2,385

$0.093

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Vyrian

USA . 231 parts In-Stock

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$0.098

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231

$0.098

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Chip Stock

USA . 36,000 parts In-Stock

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36,000

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Distributors (Availability)

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Corphita

USA . 2,093 parts In-Stock

1+ parts

$0.088

100+ parts

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2,093

$0.088

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Corohmni

South Africa . 172 parts In-Stock

1+ parts

$0.098

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172

$0.098

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Component Stockers USA

USA . 58,864 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

58,864

$0.100

$0.090

$0.080

$0.080

Continental Prestige Electronics

USA . 48,000 parts In-Stock

1+ parts

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$0.080

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48,000

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$0.080

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Kulean Microsystems

USA . 7,165 parts In-Stock

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SupplyDigital Components

Austria . 5,435 parts In-Stock

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Microchip USA

USA . 4,966 parts In-Stock

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4,966

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Problanco Electronics

Mexico . 1,919 parts In-Stock

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TANS Electronics

Latvia . 257 parts In-Stock

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UHIMA Technologies

Türkiye . 151 parts In-Stock

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Overview

Upgrade your logic gate applications with the NLX1G11CMUTCG from Onsemi. This high-quality product offers fast propagation delay, low power consumption, and a wide operating temperature range, making it ideal for a variety of military-grade projects. With its small outline and surface-mount capabilities, this logic gate provides easy integration and space-saving solutions. Trust in Onsemi's expertise and innovation to bring you reliable and efficient components for all your electronic needs.

Feature Benefit Bullets

Propagation Delay: 19 ns

Low propagation delay ensures fast signal processing, making this product suitable for applications requiring quick response times.

Nominal Supply Voltage: 5V

Operates at a standard 5V supply voltage commonly used in many electronic systems, ensuring compatibility and ease of integration.

No. of Inputs: 3

Provides flexibility and versatility in logic operations by allowing multiple inputs to be processed simultaneously.

Package Style: SMALL OUTLINE, VERY THIN PROFILE

Compact and thin package design saves space on the circuit board, making it ideal for applications where size constraints are a concern.

Maximum Operating Temperature: 125°C

High maximum operating temperature ensures reliable performance in harsh environmental conditions, suitable for industrial or automotive applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable in various applications.

Technical Specifications

Logic Gates NLX1G11CMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

S-PDSO-N6

Length:

1 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

19 ns

Propagation Delay (tpd):

19 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX1G11CMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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