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NLX1G332CMUTCG

Onsemi

NLX1G332CMUTCG by Onsemi

NLX1G332CMUTCG by Onsemi is a CMOS Logic Gate with 3 inputs, 19ns propagation delay at 5V. Suitable for military applications, it has a small outline package, operates b/w -55 to 125°C, and features dual nickel gold palladium terminals.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 96,000 parts In-Stock

1+ parts

-

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$0.137

1k+ parts

$0.114

10k+ parts

$0.102

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$0.137

$0.114

$0.102

DigiKey

USA . 96,000 parts In-Stock

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-

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$0.170

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$0.170

Verical

USA . 96,000 parts In-Stock

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$0.127

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$0.127

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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Mouser Electronics

USA . 1,190 parts In-Stock

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$0.108

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Distributors (In-Stock)

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Vyrian

USA . 1,846 parts In-Stock

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$0.108

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Digiode

USA . 2,185 parts In-Stock

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$0.112

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Chip Stock

USA . 41,000 parts In-Stock

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Flip Electronics

USA . 3,000 parts In-Stock

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Contempo Components LLC

USA . 280 parts In-Stock

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280

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Corphita

USA . 901 parts In-Stock

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$0.106

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901

$0.106

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Corohmni

South Africa . 448 parts In-Stock

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$0.108

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448

$0.108

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Component Stockers USA

USA . 102,815 parts In-Stock

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$0.120

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$0.110

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$0.100

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$0.100

102,815

$0.120

$0.110

$0.100

$0.100

Continental Prestige Electronics

USA . 96,000 parts In-Stock

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$0.092

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$0.092

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Problanco Electronics

Mexico . 7,449 parts In-Stock

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Microchip USA

USA . 4,085 parts In-Stock

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SupplyDigital Components

Austria . 2,677 parts In-Stock

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Kulean Microsystems

USA . 935 parts In-Stock

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TANS Electronics

Latvia . 775 parts In-Stock

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UHIMA Technologies

Türkiye . 22 parts In-Stock

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Overview

Elevate your electronics projects with the NLX1G332CMUTCG by Onsemi. Crafted with precision and expertise, Onsemi's logic gates are designed to deliver top-notch performance and reliability. Ideal for a wide range of applications, this logic gate offers unparalleled value and benefits to customers seeking efficiency and high-quality results. Upgrade your designs today with the NLX1G332CMUTCG and experience the advantages of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gate, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 19 ns

Low propagation delay ensures fast operation and response times in circuit applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and space.

No. of Inputs: 3

Having multiple inputs allows for more complex logic operations to be performed, increasing the versatility of the logic gate.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes this logic gate compatible with a wide range of electronic systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can perform reliably in a variety of environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy-efficient and reliable.

Technical Specifications

Logic Gates NLX1G332CMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

S-PDSO-N6

Length:

1 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

19 ns

Propagation Delay (tpd):

19 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NLX1G332CMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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