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NLX1G332MUTCG

Onsemi

NLX1G332MUTCG by Onsemi

NLX1G332MUTCG by Onsemi is a CMOS Logic Gate with 3 inputs, 19ns propagation delay at 5V. It operates in a temperature range of -55 to 125 °C and has a load capacitance of 15pF. Ideal for military applications due to its small outline package style and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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SupplyDigital Components

Austria . 2,634 parts In-Stock

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Problanco Electronics

Mexico . 2,025 parts In-Stock

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Kulean Microsystems

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Corphita

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TANS Electronics

Latvia . 226 parts In-Stock

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Corohmni

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UHIMA Technologies

Türkiye . 46 parts In-Stock

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Overview

Experience the superior quality of Onsemi with the NLX1G332MUTCG Logic Gate. Perfect for a wide range of applications, this high-performance component offers unmatched reliability and efficiency. With fast propagation delay and low power consumption, this logic gate is ideal for demanding projects where precision is key. Trust Onsemi to deliver cutting-edge technology that exceeds your expectations. Elevate your designs with the NLX1G332MUTCG Logic Gate today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this product lightweight and durable, making it suitable for various applications.

Propagation Delay At Nominal Supply: 19 ns

With a low propagation delay at nominal supply voltage, this logic gate ensures fast and efficient signal processing, enhancing overall performance.

Surface Mount: YES

Being surface mountable allows for easy and convenient integration onto circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V, this logic gate is compatible with a wide range of systems and power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can withstand elevated temperatures, ensuring reliable operation in harsh environments.

Technology: CMOS

Utilizing CMOS technology, this logic gate offers low power consumption, high noise immunity, and compatibility with various digital systems.

Technical Specifications

Logic Gates NLX1G332MUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.2 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,16

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

19 ns

Propagation Delay (tpd):

19 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX1G332MUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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