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NLX1G332AMX1TCG

Onsemi

NLX1G332AMX1TCG by Onsemi

NLX1G332AMX1TCG by Onsemi is a CMOS Logic Gate with 3 inputs, 19ns propagation delay at 5V. It operates in temperatures from -55 to 125 °C and has a load capacitance of 15pF. Ideal for military applications due to its small outline package style and dual terminal position.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,373 parts In-Stock

1+ parts

$1.260

100+ parts

$0.404

1k+ parts

$0.311

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-

1,373

$1.260

$0.404

$0.311

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Rochester

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

27,000

-

$0.092

$0.077

$0.068

Verical

USA . 27,000 parts In-Stock

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$0.086

27,000

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$0.086

Distributors (In-Stock)

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Digiode

USA . 1,716 parts In-Stock

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$0.072

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$0.072

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J2 Sourcing AB

Sweden . 15,000 parts In-Stock

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Vyrian

USA . 3,303 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 270 parts In-Stock

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$0.068

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-

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270

$0.068

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Corohmni

South Africa . 467 parts In-Stock

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$0.076

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467

$0.076

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AZTECH Wire

Italy . 738 parts In-Stock

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$19.000

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738

$19.000

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Continental Prestige Electronics

USA . 27,000 parts In-Stock

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$0.066

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27,000

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$0.066

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Perfect Parts

USA . 13,459 parts In-Stock

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Problanco Electronics

Mexico . 6,498 parts In-Stock

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Kulean Microsystems

USA . 5,907 parts In-Stock

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Authorized Procurement Solutions

USA . 1,373 parts In-Stock

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GreenTree Electronics

Israel . 1,373 parts In-Stock

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TANS Electronics

Latvia . 559 parts In-Stock

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UHIMA Technologies

Türkiye . 527 parts In-Stock

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527

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SupplyDigital Components

Austria . 335 parts In-Stock

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Microchip USA

USA . 180 parts In-Stock

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Vigor

Singapore . 156 parts In-Stock

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Overview

Experience the cutting-edge technology of the NLX1G332AMX1TCG by Onsemi, a high-quality logic gate that offers reliability and precision in your electronic projects. Manufactured by Onsemi, a trusted industry leader, this product boasts a wide range of applications in various electronic devices. With fast propagation delay and low power consumption, this logic gate ensures efficient performance while saving energy. Upgrade your projects with the NLX1G332AMX1TCG and enjoy the benefits of superior quality and functionality that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, making it suitable for a wide range of applications.

Propagation Delay At Nominal Supply: 19 ns

With a low propagation delay, this logic gate can process signals quickly, making it suitable for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy installation and saves space on the PCB, making it ideal for compact electronics.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes it compatible with many other components and systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can withstand extreme environmental conditions, increasing its reliability.

Technology: CMOS

Using CMOS technology provides low power consumption and high noise immunity, making it energy-efficient and reliable.

Technical Specifications

Logic Gates NLX1G332AMX1TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

1G

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

3

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Power Supplies (V):

1.8/5

Propagation Delay At Nominal Supply:

19 ns

Propagation Delay (tpd):

19 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.4 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1 mm

Trade Compliance

NLX1G332AMX1TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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